Two ultimately thin
vanadium-rich 2D materials based
on VS2 are created via molecular beam epitaxy and investigated
using
scanning tunneling microscopy, X-ray photoemission spectroscopy, and
density functional theory (DFT) calculations. The controlled synthesis
of stoichiometric single-layer VS2 or either of the two
vanadium-rich materials is achieved by varying the sample coverage
and sulfur pressure during annealing. Through annealing of small stoichiometric
single-layer VS2 islands without S pressure, S-vacancies
spontaneously order in 1D arrays, giving rise to patterned adsorption.
Via the comparison of DFT calculations with scanning tunneling microscopy
data, the atomic structure of the S-depleted phase, with a stoichiometry
of V4S7, is determined. By depositing larger
amounts of vanadium and sulfur, which are subsequently annealed in
a S-rich atmosphere, self-intercalated ultimately thin V5S8-derived layers are obtained, which host 2 × 2
V-layers between sheets of VS2. We provide atomic models
for the thinnest V5S8-derived structures. Finally,
we use scanning tunneling spectroscopy to investigate the charge density
wave observed in the 2D V5S8-derived islands.