Strong Magnetic Field Annealing for Improved Phthalocyanine Organic Thin‐Film Transistors

Comeau, Zachary J.; Cranston, Rosemary R.; Lamontagne, Halynne R.; Shuhendler, Adam J.; Lessard, Benoît H.

doi:10.1002/smll.202206792

Cited by 3 publications

(2 citation statements)

References 52 publications

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“…Pc molecules can be considerably mobile within a film and have been shown to reorientate into more energetically favorable positions with annealing temperature, [ 51,52 ] solvent exposure, [ 53,54 ] and even strong magnetic and gravitational fields. [ 55–57 ] For the films fabricated herein, after applying sufficient thermal energy to induce reorganization the resultant microstructures of films deposited by PVD and spin‐coating remain unalike, undergoing different processes with high‐temperature annealing. These results suggest that the initial differences in film microstructure and morphology obtained by sublimation or solution processing are too great to overcome by post deposition processes despite the restructuring ability of Pcs.…”

Section: Resultsmentioning

confidence: 99%

Polarized Raman Microscopy to Image Microstructure Changes in Silicon Phthalocyanine Thin‐Films

Cranston,

Lanosky,

Ewenike

et al. 2024

Small Science

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The choice of deposition technique and post deposition treatment can significantly influence the performance of organic electronic devices by altering the complex relationship between film properties and charge transport. Herein, the influence of deposition method and post deposition thermal annealing on the thin‐film properties of an emerging semiconductor, bis(tri‐n‐propylsilyl oxide) SiPc ((3PS)2‐SiPc), is examined by polarized Raman microscopy. Comparing physical vapor deposition (PVD) and spin‐coating, the orientation of (3PS)2‐SiPc molecules in films is determined and further characterized by X‐ray diffraction to assess variations in microstructure and morphology due to thermal annealing. Despite differences in film formation, non‐annealed organic thin‐film transistors (OTFTs) fabricated by PVD and spin‐coating resulted in similar electron mobilities (μe) on the order of 10−2 cm2 V−1 s−1 and threshold voltages (VT) of 10–20 V. Films fabricated by PVD annealed at 175 °C transition to a new polymorphic form with molecules aligned at a higher angle to the substrate and exhibiting reduced device performance. Conversely, spin‐coated films do not undergo any new polymorph formation or structural reorganization with thermal annealing. PVD fabricated films are thus more readily able to undergo transformations to structure and morphology with post deposition processing, while the microstructure of spin‐coated films is established at the time of deposition.

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Section: Resultsmentioning

confidence: 99%

Polarized Raman Microscopy to Image Microstructure Changes in Silicon Phthalocyanine Thin‐Films

Cranston,

Lanosky,

Ewenike

et al. 2024

Small Science

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“…[1] Initially discovered in 1907, MPcs have become one of the most ubiquitous blue and green pigments for a variety of applications including textiles and plastics, [2,3] automotive paints, [4] and printing inks. [5] In recent years, their semiconducting properties have enabled their application in electronic devices, including solar cells and photodetectors, [6][7][8] electrochemical sensors, [9][10][11][12] organic thin-film transistors (OTFTs), [12][13][14] and organic light-emitting devices, [15][16][17] among others. The solid-state packing and frontier molecular orbitals of MPcs can vary based on their chemical structure and the processing of the film.…”

Section: Introductionmentioning

confidence: 99%

Electron Donating Functional Polymer Dielectrics to Reduce the Threshold Voltage of n‐Type Organic Thin‐Film Transistors

Ronnasi,

King,

Brixi

et al. 2024

Adv Elect Materials

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Low‐cost and high‐performance electronics based on synthetically simple materials are required to fuel the deployment of smart packaging and wearable electronics. Metal phthalocyanines (MPcs) are promising semiconductors for use in n‐type organic thin film transistors (OTFTs) but often require high operating voltages. The first silicon phthalocyanine‐based OTFT with a polymer dielectric is reported as an alternative to traditional metal oxide dielectrics. Incorporating poly(methyl methacrylate) (PMMA) as the dielectric successfully reduces the threshold voltage (VT) of bispentafluorophenoxy SiPc (F10‐SiPc) from 14.9V to 7.3V while retaining high mobility. Further reduction in VT is obtained by using copolymers and blends of PMMA and dimethylamino ethyl methacrylate (DMAEMA)‐containing polymers, where a higher molar fraction of DMAEMA leads to a consistent drop in VT to ‐0.7 V. The electron‐donating groups of the tertiary amines in the DMAEMA show clear interfacial doping of the semiconductor, reducing the voltage required to populate the dielectric/semiconductor interface with charge carriers and turn on the device. Blending trace amounts of DMAEMA‐containing copolymers with PMMA proves to be an effective strategy for reducing the VT while keeping the charge mobility high, unlike when using pure copolymers with elevated DMAEMA content. Time of flight secondary ion mass spectroscopy (ToF‐SIMS) and X‐ray photoelectron spectroscopy (XPS) demonstrate that the DMAEMA‐containing copolymer is floating to the surface of the PMMA blend at the dielectric–semiconductor interface, which explains the reduced VT. Synchrotron scanning transmission X‐ray microscopy (STXM) demonstrates that PMMA promotes a more edge‐on orientation of F10‐SiPc films, compared to the more face‐on orientation when deposited on the DMAEMA containing copolymer. This study demonstrates a straightforward process for designing dielectric polymers and their blends for the reduction in VT for n‐type OTFTs.

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Optically Mediated Nonvolatile Resistive Memory Device Based on Metal–Organic Frameworks

Yang,

Huang,

et al. 2024

Advanced Materials

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Metal–organic frameworks (MOFs), characterized by tunable porosity, high surface area, and diverse chemical compositions, offer unique prospects for applications in optoelectronic devices. However, the prevailing research on thin‐film devices utilizing MOFs has predominantly focused on aspects such as information storage and photosensitivity, often neglecting the integration of the advantages inherent in both photonics and electronics to enhance optical memory. This work demonstrates a light‐mediated resistive memory device based on a highly oriented porphyrin‐based MOFs film, in which the resistance state of the memristor is modulated by light, realizing the integration of the perception and storage of optical information. The memristor shows excellent performance with a wide light range of 405–785 nm and a persistent photoconductivity phenomenon up to 8.3 × 103 s. Further mechanistic studies have revealed that the resistive switching effect in the memristor is primarily associated with the reversible formation and annihilation of Ag conductive filaments.

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Strong Magnetic Field Annealing for Improved Phthalocyanine Organic Thin‐Film Transistors

Cited by 3 publications

References 52 publications

Polarized Raman Microscopy to Image Microstructure Changes in Silicon Phthalocyanine Thin‐Films

Polarized Raman Microscopy to Image Microstructure Changes in Silicon Phthalocyanine Thin‐Films

Electron Donating Functional Polymer Dielectrics to Reduce the Threshold Voltage of n‐Type Organic Thin‐Film Transistors

Optically Mediated Nonvolatile Resistive Memory Device Based on Metal–Organic Frameworks

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