Strong non-volatile voltage control of magnetization and the magnetodielectric properties in polymer-based sandwich-structured composites

Simultaneously Achieving Colossal Permittivity, Ultralow Dielectric Loss Tangent, and High Insulation Resistivity in Er-Doped SrTiO3 Ceramics via Oxygen Vacancy Regulation

“…Ramachandra Munikoti and Keigo Suzuki et al studied the performance degradation of different products by using a high accelerated life test and obtained different performance degradation results under different aging conditions. , Based on the above, at present, in the field of rare-earth doped SrTiO 3 colossal permittivity ceramics, researchers usually mention superficially that the generation of colossal permittivity and resistance degradation are closely related to the oxygen vacancy. Still, there are few discussions about how the oxygen vacancy acts in the ceramic, namely, the generation, migration, and annihilation of the oxygen vacancy. , …”

Ultralow dielectric loss in Y‐doped SrTiO3 colossal permittivity ceramics via designing defect chemistry

“…However, the high dielectric loss and weak temperature/frequency stability of CP materials have restricted their wide application in industry, and the origin and mechanism of CP are also controversial. Therefore, CP materials have been attracting the attention of researchers 1‐36 . At present, there are several mechanisms which correspond to explain the dielectric properties of different CP materials.…”

“…First, the interface effect is widely considered to be the most important role in CP materials. On this basis, the researchers introduced internal barrier layer capacitance (IBLC) and surface barrier layer capacitance (SBLC) models to explain the CP of CaCu 3 Ti 4 O 12 , NiO, and codoped TiO 2 2‐15 . Second, electron‐pinned defect dipoles and localized defect complex/cluster related to oxygen vacancies are used to explain the CP of SrTiO 3 (ST) and codoped TiO 2 16‐21 .…”

“…One of the key factors of the above explanatory mechanisms is the oxygen vacancies, which are directly associated with the states of charge carriers and defects in materials. Doping and tuning sintering atmosphere are the efficient ways to regulate the concentration, distribution, migration of , and the defect dipoles in materials 1‐27 . Acceptor doping promotes the formation of ; otherwise, donor doping reduces the number of oxygen vacancies and inhibits their migration.…”

“…On this basis, the researchers introduced internal barrier layer capacitance (IBLC) and surface barrier layer capacitance (SBLC) models to explain the CP of CaCu 3 Ti 4 O 12 , NiO, and codoped TiO 2 . [2][3][4][5][6][7][8][9][10][11][12][13][14][15] Second, electron-pinned defect dipoles and localized defect complex/cluster related to oxygen vacancies are used to explain the CP of SrTiO 3 (ST) and codoped TiO 2 . [16][17][18][19][20][21] Third, the polaronic relaxation model is established, which describes that electrons hopping leads to the creation of localized dipoles due to charge redistribution, to explain the CP of CaCu 3 Ti 4 O 12 , NiO, and codoped TiO 2 .…”