During the past years, much research
work has been focused on efficiently
harvesting solar energy with black silicon (b-Si). However, semiconductor
Si can only utilize solar energy with wavelength smaller than λ
= 1110 nm (bandgap E
g = 1.12 eV) for photovoltaic
applications or photoelectrochemical conversions. Light with wavelength
beyond the band edge (above λ = 1110 nm) cannot be used. Here,
we prepared highly conductive b-Si without an apparent optical bandgap
by a reactive ion etching process, which can largely absorb light
with a wide range wavelength and even far into the near-infrared region
(∼2500 nm). The optimized b-Si with surface texture shows the
specular reflection rate lower than 0.1% and the average total reflection
(specular reflectance + diffuse reflectance) is about 1.1%. Additionally,
we briefly introduce the mechanism and reflection principle of surface
nanostructured b-Si. By using b-Si structured material, we successfully
convert the solar energy to electric power via photo-thermoelectric
conversion, especially solar energy exceeding 1110 nm wavelength can
also be efficiently used. The excellent light trapping of sunlight
shows great potential for photothermal applications, such as photothermal
imaging, seawater desalination, and further applications.