2014
DOI: 10.1103/physrevb.90.115418
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Strongly bound excitons in gapless two-dimensional structures

Abstract: Common wisdom asserts that bound excitons cannot form in high-dimensional (d>1) metallic structures because of their overwhelming screening and unavoidable resonance with nearby continuous bands. Strikingly, here we illustrate that this prevalent assumption is not quite true. A key ingredient that has been overlooked is that of viable decoherence that thwarts the formation of resonances. As an example of this general mechanism, we focus on an experimentally relevant material and predict bound excitons in twist… Show more

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Cited by 25 publications
(83 citation statements)
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References 42 publications
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“…The VBM at K shows contributions only from d orbitals of WX 2 , and the CBM at K only from d orbitals of MoX 2 , consistent with the formation of a type-II band alignment [37,42,43]. The inclusion of band structure corrections with the GW method increases the gap of the individual monolayers by~0.5-1 eV but does not change the type-II alignment predicted within DFT [44], similar to what was found in previous studies of 2D material interfaces [45].…”
Section: Electronic Structurementioning
confidence: 59%
See 1 more Smart Citation
“…The VBM at K shows contributions only from d orbitals of WX 2 , and the CBM at K only from d orbitals of MoX 2 , consistent with the formation of a type-II band alignment [37,42,43]. The inclusion of band structure corrections with the GW method increases the gap of the individual monolayers by~0.5-1 eV but does not change the type-II alignment predicted within DFT [44], similar to what was found in previous studies of 2D material interfaces [45].…”
Section: Electronic Structurementioning
confidence: 59%
“…Quantitative calculations of band offsets are significantly more complex. GW corrections to the band gap of the single materials plus band alignment using DFT interface dipoles appears to be a viable route for large systems [44,45,48]. Studies in which entire interfaces are computed using GW are still challenging due to computational cost.…”
Section: Electronic Structurementioning
confidence: 99%
“…The possibility of the formation of excitons in tBLG has been proposed theoretically in Ref. [447]. The exciton is formed by the hole, located near the VHS above the Fermi level and the electron located close to the bottom of the upper electron band.…”
Section: Dynamical Conductivitymentioning
confidence: 99%
“…According to calculations done in Ref. [447], the electron-hole interaction leads to the formation of the bound exciton with binding energy E b ∼ 0.5 eV. The existence of these excitonic states should result in increasing the lifetime of optical excitations.…”
Section: Dynamical Conductivitymentioning
confidence: 99%
“…Additionally, the existence of a strongly bound exciton with a binding energy of $0.5 eV was predicted for twisted graphene bilayers. [93] However, the optical oscillator strength for this exciton was calculated to be weak and hence two-photon techniques or applying of a magnetic field are needed for its detection.…”
Section: Stacked Graphene Layersmentioning
confidence: 99%