2D materials with anisotropic symmetry are likely, in general, to possess strain that is artificially adjustable in a single direction, inspiring strategies of artificial regulation of local structures and related properties. Herein, strain‐induced wrinkles in an anisotropic 2D transition‐metal‐trichalcogenide HfTe3 film are fabricated and illustrated for the first time. The corresponding localized electronic structures in the 1D corrugated wrinkles are revealed by a combination of experiment and simulation. The wrinkled HfTe3 film probably features electrical transport properties never before seen and useful for developing wrinkle‐based heterojunctions for novel nanoelectronic devices.