Strongly coupled phase transition in ferroelectric/correlated electron oxide heterostructures

Lu, Ji-Qing; Choi, Woo Seok; Jeen, Hyoungjeen; Egami, T.; Lee, Ho Nyung

doi:10.1063/1.4738784

Cited by 32 publications

(36 citation statements)

References 26 publications

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“…These changes in the hole carrier density near the interface could drastically alter the electronic and magnetic states of LSMO, especially when x is near a phase boundary. 24 The distinctly different phase of LSMO would of course change the boundary condition at PZT/LSMO interface dramatically, influencing the tunneling current that we observe in the CAFM measurement. Note also that the Some of the effects described here have been further verified by theoretical calculations.…”

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confidence: 99%

“…a 100,000 fold change in resistivity at 50 K, is solely related with the polarization of our PZT film. 24 Such a huge change in resistivity by FE polarization is amongst the largest ever reported. 16 On the other hand, Figure 2c shows results for x = 0.50 LSMO displaying an opposite trend to that of x = 0.…”

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confidence: 99%

“…As shown in Figure 5 and discussed previously, the screening effect on the LSMO layer is mostly restricted to just a few layers from the interface. 24 Although the screening length depends on the LSMO effective dielectric constant used, the qualitative tendencies are unambiguous: when the FE polarization points away from the LSMO layer, the interfacial e g density is prominently decreased (i.e. holes are accumulated).…”

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confidence: 99%

“…As previously reported, the spatial extent of the ample FE polarization effect is limited to only a few nanometers. 24 Therefore, we focused on heterostructures with an ultrathin LSMO layer (5 nm). The polarization direction of the as-grown PZT was upward, so the LSMO film with PZT capping layer should have a hole accumulation state.…”

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confidence: 99%

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Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures

et al. 2013

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The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across the FTJs that are induced by changes in the FE polarization direction. Here, we show that in practice the junction current ratios between the two polarization states can be further enhanced by the electrostatic modification in the correlated electron oxide electrodes, and that FTJs with nanometer thin layers can effectively produce a considerably large electroresistance ratio at room temperature. To understand these surprising results, we employed an additional control parameter, which is related to the crossing of electronic and magnetic phase boundaries of the correlated electron oxide. The FE-induced phase modulation at the heterointerface ultimately results in an enhanced electroresistance effect. Our study highlights that the strong coupling between degrees of freedom across heterointerfaces could yield versatile and novel applications in oxide electronics.

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Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures

et al. 2013

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“…20,[25][26][27] The goal to change the order parameter at the boundary between different structural, magnetic or electronic ground states using a FE is indeed a highly effective approach to designing functional interfacial properties. [28][29][30] Since neutrons are highly penetrating and sensitive to changes in the nuclear (n) and magnetic (m) scattering length densities (SLD) of a material at the atomic scale, the chemical and magnetic evolution of buried interfaces affected by charge depletion or accumulation can be detected as changes in the mSLD depth profile. Considering these facts, PNR has the capability to nondestructively probe the influence of electrostatic doping upon the suppressed surface and interfacial magnetism of manganite thin films, of which the origin has been difficult to isolate ( Figure 1).…”

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confidence: 99%

Enhancing interfacial magnetization with a ferroelectric

et al. 2016

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Ferroelectric control of interfacial magnetism has attracted much attention. However, the coupling of these two functionalities has not been understood well at the atomic scale. The lack of scientific progress is mainly due to the limited characterization methods by which the interface's magnetic properties can be probed at an atomic level. Here, we use polarized heterostructures. We find that the magnetization at the surfaces and interfaces of our LSMO films without PZT are always deteriorated and such magnetic deterioration can be greatly improved by interfacing with a strongly polar PZT film. Magnetoelectric coupling of magnetism and ferroelectric polarization was observed within a couple of nanometers of the interface via an increase in the LSMO surface magnetization to 4.0 µ B /f.u., a value nearly 70% higher than the surface magnetization of our LSMO film without interfacing with a ferroelectric layer. We attribute this behavior to hole depletion driven the by the ferroelectric polarization. These compelling results not only probe the presence of nanoscale magnetic suppression and its control by ferroelectrics, but also emphasize the importance of utilizing probing techniques that can distinguish between bulk and interfacial phenomena.

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Magnetoelectric Phase Control at Domain‐Wall‐Like Epitaxial Oxide Multilayers

Gradauskaite,

Yang,

Efe

et al. 2024

Adv Funct Materials

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Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is observed at charged ferroelectric domain walls. Regrettably, domain walls of this type are scarce because of the energetically unfavorable electrostatics. This hinders the current technological development of domain‐wall nanoelectronics. Here this constraint is overcome by creating robust domain‐wall‐like objects in epitaxial oxide heterostructures. Charged head‐to‐head (HH) and tail‐to‐tail (TT) junctions are designed with two ferroelectric layers (BaTiO3 and BiFeO3) that have opposing out‐of‐plane polarization. To test domain‐wall‐like functionalities, an ultrathin ferromagnetic La0.7Sr0.3MnO3 layer is inserted into the junctions. The interfacial electron or hole accumulation at the interfaces, set by the HH and TT polarization configurations, respectively, controls the LSMO conductivity and magnetization. Thus it is proposed that trilayers reminiscent of artificial domain walls provide magnetoelectric functionality and may constitute an important building block in the design of oxide‐based electronic devices.

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Strongly coupled phase transition in ferroelectric/correlated electron oxide heterostructures

Abstract: Examining the screening limit of field effect devices via the metal-insulator transition Appl. Phys. Lett. 86, 142501 (2005); 10.1063/1.1897076 La 0.8 Sr 0.2 MnO 3 -heterostructure effects on the dielectric properties of PbTiO 3 -based thin films

Cited by 32 publications

References 26 publications

Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures

Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures

Enhancing interfacial magnetization with a ferroelectric

Magnetoelectric Phase Control at Domain‐Wall‐Like Epitaxial Oxide Multilayers

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