2023
DOI: 10.1016/j.rinp.2023.106415
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Strongly enhanced infrared absorption of HfSe2 monolayer by lanthanide doping: A first-principles study

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Cited by 4 publications
(3 citation statements)
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“…And for 0.5 Ln-BMO, the peak value of the infrared region has a different degree of change. These peaks correspond to electron transitions between the band gaps, which are attributed to the long-lived electronic energy levels of [Ln] 4d and the interaction between [O] 2p and [Ln] 4d [54,55].…”
Section: Complex Dielectric Constant ε(ω)mentioning
confidence: 99%
See 1 more Smart Citation
“…And for 0.5 Ln-BMO, the peak value of the infrared region has a different degree of change. These peaks correspond to electron transitions between the band gaps, which are attributed to the long-lived electronic energy levels of [Ln] 4d and the interaction between [O] 2p and [Ln] 4d [54,55].…”
Section: Complex Dielectric Constant ε(ω)mentioning
confidence: 99%
“…As for the calculated absorption coefficient, it can be observed that the doping of Ln 3+ ions presents a new absorption peak that cannot appear in the intrinsic material in the infrared region and visible region (less than 2.0 eV), which is attributed to the introduction of the Ln 3+ ions. And Ln 3+ ions have a smaller ionic radius and a stronger ionic charge that leads to the extra electronic state in the band gap, resulting in the appearance of the low-energy absorption band [54]. Especially in the visible region, 0.25 Gd-BMO and 0.5 Gd-BMO exhibit a strong absorption coefficient and low reflectance, which further indicates that Gd-BMO has a strong light response and transmittance, and explains the reason that Gd-BMO has strong light catalytic ability, which is consistent with the previous analysis.…”
Section: Reflectivity R(ω) and Absorption Coefficient α(ω)mentioning
confidence: 99%
“…These 2D materials have many limitations, including a zero-band gap in graphene [7], energetic instability in phosphorene [8], or low carrier mobility in monolayer TMDCs [9], that should be addressed before they can be used for practical applications. To address these issues, many approaches have already been developed, including strain engineering [10], molecule functionalization [11], doping [12], electric fields [13,14], and stacking layers [15][16][17][18][19]. Among these methods, the creation of stacking layers, i.e.…”
Section: Introductionmentioning
confidence: 99%