Strongly improved frequency response at high-optical input powers from InGaAsP compensated strain MQW electroabsorption modulators

Wide-bandwidth lasers and modulators for RF photonics

“…Therefore, optical saturation performance of the EA modulator improves. Carrier escape times of strained and unstrained EA modulators were measured from the modulator photo response to a short optical pulse with large peak powers [35]. Increase in the decay time with increasing peak optical power was found to be significantly larger for the modulator with lattice matched MQW.…”

High-power electroabsorption modulator for radio over fibre system

“…Electroabsorption modulators (EAMs) based on the quantumconfined Stark effect (QCSE) of a multiple quantum wells (MQW) structure have been widely used for optical fibre communication due to their low chirp and integration with other semiconductor devices such as the laser diode, while being very effective in changing the light intensity as a function of the applied electric field [1][2][3][4][5][6][7][8][9][10]. Analog links, especially for radio over fibre systems, have imposed stringent demands on EAMs' performance, such as a high modulation ratio with low driving voltage, large radio-frequency (RF) link gain and large two-tone spurious-free dynamic range (SFDR).…”

Design of a novel periodic asymmetric intra-step-barrier coupled double strained quantum well electroabsorption modulator at 1.55μm

“…It has been shown that using InAlAs (or InGaAlAs) instead of InP or InGaAsP as barrier materials improves the optical saturation of the MQW EAM, effectively as a result of the reduced valence band offset. It has also been reported that the strain-compensated InGaAsP/InGaAsP [4] and InAsP/GaInP [5], which have shallow wells, improves the saturation optical power at 1.3 and 1.55 lm, respectively. Recently, the use of an asymmetric QW with a step barrier to achieve high-optical-power operation has been proposed [6,7].…”