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Zúñiga‐Pérez, Jesús; Munuera, Carmen; Ocal, Carmen; Muñoz‐Sanjosé, V.

doi:10.1016/j.jcrysgro.2004.07.069

Cited by 36 publications

(7 citation statements)

References 23 publications

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“…Details on the growth conditions and structural properties of these epilayers can be found elsewhere. 8,9 Hall-effect measurements revealed that the as-grown CdO thin films display high n-type conductivity, with free-electron densities as high as 1.8 Â 10 20 cm À3 and electron mobilities around 50 cm 2 V À1 s À1 .…”

Section: Methodsmentioning

confidence: 99%

High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

Oliva

Ibáñez

Artús

et al. 2013

Journal of Applied Physics

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We have performed Raman-scattering measurements under high hydrostatic pressure on CdO thin films grown by metal-organic vapor phase epitaxy on sapphire substrates. The pressure dependence of the second-order Raman bands is discussed in terms of ab initio lattice-dynamical calculations, which allow us to obtain mode Gr€ uneisen parameters for the zone-center TO and LO modes of CdO. Our experiments and calculations suggest that at low pressures (<4 GPa) the Raman spectra are dominated by second-order modes, while at higher pressures (>4 GPa) the spectra mainly display contributions from disorder-activated first-order modes. V C 2013 American Institute of Physics.

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Section: Methodsmentioning

confidence: 99%

High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

Oliva

Ibáñez

Artús

et al. 2013

Journal of Applied Physics

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“…In the AFM images, pyramidal grains several hundreds of nanometers in size were observed which are similar to those previously reported for samples grown by the same method. 15 …”

Section: Methodsmentioning

confidence: 99%

Electron mobility in CdO films

Farahani

Veal

King

et al. 2011

Journal of Applied Physics

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Electron mobility in degenerate CdO thin films has been studied as a function of carrier concentration. The "optical" mobility has been determined from infrared reflectance measurements of the conduction band plasmon lifetime. The acquired values vary from $209 to $1116 cm 2 V À1 s À1 for carrier concentrations between 2:5Â10 20 and 2:6 Â 10 19 cm À3 . Ionized impurity scattering is shown to be the dominant effect reducing the intra-grain mobility of the electrons at room temperature. The transport mobilities from Hall effect measurements range between $20 and $124 cm 2 V À1 s À1 which are much lower than the optical mobilities. Simulation of grain boundary scattering-limited mobility is commonly based on models that assume a depletion layer at the boundaries which causes an inter-grain potential barrier. These models are found not to be applicable to CdO as it has been previously shown to have surface electron accumulation. Therefore, simulation of the transport mobility has been performed using the Fuchs-Sondheimer and Mayadas-Shatzkes models to take into account the grain boundary and surface scattering mechanisms, in addition to intra-grain scattering. The results indicate that electron scattering at grain boundaries with $95 % reflection is the dominant mechanism in reducing the mobility across the layer. The effect of surface scattering plays only a minor role in electron transport.

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“…Epitaxial CdO(100) single crystal thin films were grown on r-plane sapphire substrates using metal organic vapor-phase epitaxy (MOVPE), further details of which can be found elsewhere [10]. A comparison was made between samples taken from the same wafer, one annealed in UHV at 600…”

Section: Experimental and Theoretical Detailsmentioning

confidence: 99%

Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO

et al. 2014

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Hard x-ray photoelectron spectroscopy (HAXPES) is used to investigate the intrinsic electronic properties of single crystal epitaxial CdO(100) thin films grown by metal organic vapor phase epitaxy (MOVPE). The reduced surface sensitivity of the HAXPES technique relaxes stringent surface preparation requirements, thereby allowing the measurement of as-grown samples with intrinsically higher carrier concentration (n = 2.4 × 10 20 cm −3 ). High-resolution HAXPES spectra of the valence band and core levels measured at photon energy of 6054 eV are presented. The effects of conduction band filling and band gap renormalization are discussed to explain the observed binding energy shifts. The measured bandwidth of the partially occupied conduction band feature indicates that a plasmon contribution may be present at higher carrier concentrations. The Cd 3d 5/2 and O 1s core-level line shapes are found to exhibit an increased asymmetry with increased carrier concentration, interpreted as evidence for final state screening effects from the carriers in the conduction band. Alternatively the core-level line shape is interpreted as arising from strong conduction electron plasmon satellites. The nature of these two competing models to describe core-level line shapes in metallic oxides is explored.

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Structural analysis of CdO layers grown on r-plane sapphire (011¯2) by

Cited by 36 publications

References 23 publications

High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

High-pressure Raman scattering of CdO thin films grown by metal-organic vapor phase epitaxy

Electron mobility in CdO films

Hard x-ray photoelectron spectroscopy as a probe of the intrinsic electronic properties of CdO

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