Structural analysis of hydrogenated nano-crystalline silicon suboxide (nc-SiOx:H, x &lt; 1) thin films with SAXS for a potential application as phase change material

Bam, Begüm Çınar; Rüzgar, Kemal; Bacıoğlu, Akin; İde, Semra

doi:10.1016/j.surfcoat.2019.05.083

Surface and Coatings Technology

2019

DOI: 10.1016/j.surfcoat.2019.05.083

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Structural analysis of hydrogenated nano-crystalline silicon suboxide (nc-SiOx:H, x < 1) thin films with SAXS for a potential application as phase change material

Begüm Çınar Bam

Kemal Rüzgar

Akin Bacıoğlu

et al.

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2024

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Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application

Zhang,

Qi,

Xue

et al. 2024

Adv Materials Technologies

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Gallium oxide (Ga₂O₃), with its wide bandgap of 4.3–5.4 eV and tunable properties, holds great potential for applications in power electronics, solar‐blind photodetectors (PDs), and transparent conductive oxides, particularly effective in the 230–280 nm range for solar‐blind detectors. In contrast, amorphous gallium oxide (a‐GaOx) is gaining attention for UV PDs and flexible X‐ray detectors due to its straightforward synthesis. However, its effective utilization requires a deeper understanding of its chemical, structural, and optical properties. In this study, a‐GaOx is synthesized using metal–organic chemical vapor deposition (MOCVD) at a reduced oxygen flow rate. X‐ray photoelectron spectroscopy revealed that Ga₂O can constitute over 30% of the thin film at high trimethylgallium (TMGa) flux, coexisting with Ga₂O₃ and exhibiting an optical bandgap ≈3.3 eV. Notably, a metal‐semiconductor‐metal photodetector fabricated from this a‐GaOx thin film demonstrated potential as a novel broadband ultraviolet (BUV) absorption material, effectively covering the 254 to 360 nm range.

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Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application

Zhang,

Qi,

Xue

et al. 2024

Adv Materials Technologies

View full text Add to dashboard Cite

show abstract

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Structural analysis of hydrogenated nano-crystalline silicon suboxide (nc-SiOx:H, x < 1) thin films with SAXS for a potential application as phase change material

Cited by 1 publication

References 47 publications

Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application

Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application

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Structural analysis of hydrogenated nano-crystalline silicon suboxide (nc-SiOx:H, x < 1) thin films with SAXS for a potential application as phase change material

Cited by 1 publication

References 47 publications

Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application

Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application

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Product

Resources

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Structural analysis of hydrogenated nano-crystalline silicon suboxide (nc-SiOx:H, x < 1) thin films with SAXS for a potential application as phase change material