Structural Analysis of Si(OEt)₄ Deposits on Au(111)/SiO₂ Substrates at the Nanometer Scale Using Focused Electron Beam-Induced Deposition

Abstract

The focused electron beam-induced deposition (FEBID) process was used by employing a GeminiSEM with a beam characteristic of 1 keV and 24 pA to deposit pillars and line-shaped nanostructures with heights between 9 nm and 1 μm and widths from 5 nm to 0.5 μm. All structures have been analyzed to their composition looking at a desired Si/ O/C content measuring a 1:2:0 ratio. The C content of the structure was found to be ∼over 60% for older deposits kept in air (∼at room temperature) and less than 50% for later deposits, only 12 h old. Upon depositing Si(OEt) 4 at high rates and at a deposition temperature of under 0 °C, the obtained Si content of our structures was between 10 and 15 atom % (compositional percentage). The FEBID structures have been deposited on Au(111)/SiO 2 . The Au(111) was chosen as a substrate for the deposition of Si(OEt) 4 due to its structural and morphological properties. With its surface granulation following a Chevron pattern and surface defects having an increased contribution to the changes in the composition of the final structure content, the Au(111) surface characteristic behavior at the deposition of Si(OEt) 4 is an increase in the O ratio and a reduction in the nanodeposit heights.