Structural and antireflective characteristics of catalyst-free GaN nanostructures on GaN/sapphire template for solar cell applications

Abstract

We report the structural and antireflective characteristics of catalyst-free GaN nanostructures on GaN/sapphire template for solar cell applications. The formation of GaN nanostructure depends on the growth temperature. At 530 °C, the nucleation of the initial seed due to the enhanced strain leads to the hexagonal closely packed nanorods. As the growth temperature decreases, the depression of atomic Ga transport changes the films into nanocolumns, and then the nanorods. The catalyst-free GaN nanorods have wurtzite structure and good single crystalline quality. The GaN nanorods exhibit a remarkably low reflectance over a wide-angle broadband spectrum, enhancing the antireflective property of GaN surface.

Effects of vacancies on electronic and optical properties of GaN nanosheet: A density functional study

“…These semiconductors are widely used in efficient short-wavelength (blue and ultraviolet) light-emitting diodes (LEDs)/photodetectors, room temperature laser diodes and field-effect transistors [24,25]. Among all III-nitrides, wurtzite GaN and GaN nanostructures with the large band gap ($3.4 eV) have always been attracted increasing attention due to their applications in optics, electronics, and photoelectronics [26][27][28][29]. Recent theoretical studies predicted that wurtzite semiconductors transform into a 2D graphitic-like structures when they are prepared as an ultrathin {0 0 0 1} films [30].…”

Electronic and optical properties of advance semiconductor materials: BN, AlN and GaN nanosheets from first principles

“…Among these materials, group-III nitride semiconductor nanostructures are promising materials for various technological applications, such as semiconductor lasers, blue and ultraviolet light-emitting diodes, high-temperature/highpower electronic devices, optical detectors or even visible-light photo-catalysts for water [7][8][9][10]. These materials with a wide HOMO/LUMO energy gap (E g ) have been attracted enormous attention due to their application in photonic and optoelectronic devices [11][12][13]. Furthermore, these monolayer compounds are even more interesting in their exotic electronic characters and widely variable electronic properties according to the atomic structure at their edges.…”

Carrier Dynamics and Electro-Optical Characterization of High-Performance GaN/InGaN Core-Shell Nanowire Light-Emitting Diodes

“…Dynamic color tuning is also achievable using a multi-color approach 22 , which could potentially lead to multiplexing within VLC over several wavelength channels. In addition to LEDs, III-nitride nanowires are promising candidates for the next generation of other optoelectronic and electronic devices such as high power transistors 23 , gas sensors 24 , 25 , DNA sensors 26 , 27 , visible-blind UV photodetectors 28 , 29 , solar cells 30 , 31 ,and atomic force microscopy (AFM) probe tips 32 .…”