Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells

Avellaneda, David Avellaneda; Delgado, Gabriela; Nair, M. T. S.; Nair, P. K.

doi:10.1016/j.tsf.2006.12.078

Cited by 165 publications

(107 citation statements)

References 18 publications

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“…It is considered that the R(%) is about 35% when the wavelength is no more than 500 nm and it also decreased rapidly first and then slowly when the wavelength is more than 1000 nm. It was well known that the transmission T through an absorbing slab is related to its reflectivity R, thickness d, and absorption α by [17,20] …”

Section: Resultsmentioning

confidence: 99%

Synthesis, Optical Properties and Photovoltaic Application of the SnS Quasi-one-dimensional Nanostructures

et al. 2013

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Low-toxicity single crystal SnS nanowires had been successfully synthesized by the catalystassistant chemical vapor deposition. Au nanoparticles were applied on the ITO surface as the catalysis, using SnS powder and S powder as forerunners. The structure, morphology and optical properties of the prepared SnS nanowires were characterized. The experimental results show the as-synthesized nanowires are single crystalline with a preferential orientation. The synthesized SnS nanowires show strong absorption in the visible and nearinfrared spectral region, and the direct energy band gap of SnS nanowires is 1.46 eV.

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Section: Resultsmentioning

confidence: 99%

Synthesis, Optical Properties and Photovoltaic Application of the SnS Quasi-one-dimensional Nanostructures

et al. 2013

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“…Electronic structure and structural calculations of SnS were deduced from photoelectron spectra by Ettema et al [13]. Optoelectronic properties suitable for the device fabrication were also reported by several groups [3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 97%

“…It is a IV-VI layered compound semiconductor with distorted NaCl type orthorhombic crystal structure [3]. Due to its interesting structural, optical and electrical properties, SnS has become an important material for optoelectronics and photovoltaics [4][5][6][7] with many promising technological applications [8,9]. Further, properties like high absorption coefficient [10], direct band gap in the range 1.2-1.5 eV and indirect band gap in the range 1.0-1.2 eV [7,11] make SnS a more viable material for photovoltaic applications.…”

Section: Introductionmentioning

confidence: 99%

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

et al. 2010

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SnS thin films were prepared using automated chemical spray pyrolysis (CSP) technique. Single-phase, p-type, stoichiometric, SnS films with direct band gap of 1.33 eV and having very high absorption coefficient (N 10 5 /cm) were deposited at substrate temperature of 375°C. The role of substrate temperature in determining the optoelectronic and structural properties of SnS films was established and concentration ratios of anionic and cationic precursor solutions were optimized. n-type SnS samples were also prepared using CSP technique at the same substrate temperature of 375°C, which facilitates sequential deposition of SnS homojunction. A comprehensive analysis of both types of films was done using x-ray diffraction, energy dispersive x-ray analysis, scanning electron microscopy, atomic force microscopy, optical absorption and electrical measurements. Deposition temperatures required for growth of other binary sulfide phases of tin such as SnS 2 , Sn 2 S 3 were also determined.

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“…In the literature thin films of SnS have been deposited using a variety of techniques including spray pyrolysis [4], electrodeposition [5], chemical bath deposition [6,7] and vacuum evaporation [8]. The attempts to use the SnS in device structures are limited but previous studies have shown that cells with efficiencies > 1.3% can be produced [4,9].…”

Section: Introductionmentioning

confidence: 99%

Annealing studies and electrical properties of SnS-based solar cells

et al. 2011

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Thin films of SnS (tin sulphide) were thermally evaporated onto glass and CdS/ITO (cadmium sulphide/indium tin oxide) coated glass substrates and then annealed in vacuum with the aim of optimising them for use in photovoltaic solar cell device structures. The chemical and physical properties of the layers were determined using scanning electron microscopy, energy dispersive x-ray analysis, x-ray diffraction, and transmittance versus wavelength measurements. "Superstrate configuration" devices were also made using indium tin oxide as the transparent conductive oxide, thermally evaporated cadmium sulphide as the buffer layer and evaporated copper/indium as the back contact material. Capacitance-voltage data are given for the fabricated devices. Capacitancevoltage, spectral response and I-V data are given for the fabricated devices.

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Structural and chemical transformations in SnS thin films used in chemically deposited photovoltaic cells

Cited by 165 publications

References 18 publications

Synthesis, Optical Properties and Photovoltaic Application of the SnS Quasi-one-dimensional Nanostructures

Synthesis, Optical Properties and Photovoltaic Application of the SnS Quasi-one-dimensional Nanostructures

Optimization of parameters of chemical spray pyrolysis technique to get n and p-type layers of SnS

Annealing studies and electrical properties of SnS-based solar cells

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