1993
DOI: 10.1016/0169-4332(93)90405-z
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Structural and compositional characterization of laser ablated CeO2 thin films

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Cited by 18 publications
(7 citation statements)
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“…However, the poor intensity of the spectra with large peak widths indicated that SiO 2 is not easily accessible at the surface due to the presence of Ce-Zr-oxide over-layers. The presence of oxidized silicon has been abundantly described in the literature, sometimes as CeO 2-x /SiO 2 [84,85] or as an amorphous silicate layer [86,87], where partial reduction of Ce 4? to Ce 3?…”
Section: Xps Analysismentioning
confidence: 99%
“…However, the poor intensity of the spectra with large peak widths indicated that SiO 2 is not easily accessible at the surface due to the presence of Ce-Zr-oxide over-layers. The presence of oxidized silicon has been abundantly described in the literature, sometimes as CeO 2-x /SiO 2 [84,85] or as an amorphous silicate layer [86,87], where partial reduction of Ce 4? to Ce 3?…”
Section: Xps Analysismentioning
confidence: 99%
“…x /SiO 2 [89,90] or as an amorphous silicate layer [91,92], where partial reduction of Ce 4? to Ce 3?…”
Section: Xps Measurementsmentioning
confidence: 99%
“…This result is quite different to that observed on other semiconductor substrates such as Si and GaAs, in which a significant reactivity with Ce has been reported. 19,20 The minor chemical influence of the substrate on the film could also explain the independence of the CeO 2 properties on the substrate surface. This result suggests that the main parameter controlling the CeO 2 film orientation would be the lattice mismatch between CeO 2 and InP.…”
Section: Discussionmentioning
confidence: 99%
“…Particularly, on ͑111͒Si epitaxial ͗111͘CeO 2 has been achieved, 16,17 while the CeO 2 film properties on ͑100͒Si are determined by the surface preparation: CeO 2 grows as ͗110͘CeO 2 //͗100͘Si on bare ͑100͒Si and ͓111͔-textured on the oxidized SiO 2 /͑100͒Si surface. 18,19 Only few papers are related to the CeO 2 deposition on the direct band gap semiconductors, likely due to the lattice match and chemical reactivity which often lead to nonoptimized CeO 2 deposits, like on ͑100͒GaAs. 20 In this article, we report on the pulsed laser deposition conditions leading to PLT/CeO 2 /͑100͒InP multilayers with oriented and crystalline structures as well as on the morphology of the films obtained.…”
Section: Introductionmentioning
confidence: 99%