Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Gautier, S.; Moudakir, T.; Patriarche, G.; Rogers, David J.; Sandana, V. E.; Téherani, F. Hosseini; Bove, P.; Gmili, Youssef El; Pantzas, Konstantinos; Sundaram, S.; Tománek, David; Voss, Paul L.; Razeghi, Manijeh; Ougazzaden, A.

doi:10.1016/j.jcrysgro.2012.08.048

Cited by 18 publications

(2 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A goal of subsequent research was the wafer-scale transfer of III-N devices to flexible substrates. Transfers of different device structures such as AlGaN/GaN high-electron-mobility transistors (HEMTs), , AlGaN/GaN-based gas sensors, InGaN/GaN multi-quantum-well LEDs, and solar cells − have been then demonstrated at the wafer scale.…”

Section: Introductionmentioning

confidence: 99%

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Vuong

Mballo

Patriarche

et al. 2020

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

Hexagonal boron nitride (h-BN) can be used as a p-doped material in wide-bandgap optoelectronic heterostructures or as a release layer to allow lift-off of grown three-dimensional (3D) GaN-based devices. To date, there have been no studies of factors that lead to or prevent lift-off and/or spontaneous delamination of layers. Here, we report a unique approach of controlling the adhesion of this layered material, which can result in both desired lift-off layered h-BN and mechanically inseparable robust h-BN layers. This is accomplished by controlling the diffusion of Al atoms into h-BN from AlN buffers grown on h-BN/sapphire. We present evidence of Al diffusion into h-BN for AlN buffers grown at high temperatures compared to conventional-temperature AlN buffers. Further evidence that the Al content in BN controls lift-off is provided by comparison of two alloys, Al 0.03 B 0.97 N/sapphire and Al 0.17 B 0.83 N/sapphire. Moreover, we tested that management of Al diffusion controls the mechanical adhesion of high-electron-mobility transistor (HEMT) devices grown on AlN/h-BN/sapphire. The results extend the control of two-dimensional (2D)/3D hetero-epitaxy and bring h-BN closer to industrial application in optoelectronics.

show abstract

Section: Introductionmentioning

confidence: 99%

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Vuong

Mballo

Patriarche

et al. 2020

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

show abstract

“…On the other hand, the release of GaN-based epitaxy grown on dissimilar substrate, such as sapphire (-Al 2 O 3 ), involved physical lift-off based on laser lift-off [6][7][8][9], and recently by mechanical lift-off using sacrificial nanoporous GaN [10], and BN [11]. In chemical lift-off process demonstration, the GaN-based epitaxial layers were grown on sacrificial layers, such as ZnO [12], CrN [13], and nanostructured SiO 2 [14], for subsequent chemical etching; alternately Pt-assisted UV electroless chemical etching epitaxial release are employed based on bandgap selective, defect selective, or dopant selective mechanisms [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

GaN Nano-membrane for Optoelectronic and Electronic Device Applications

Ooi

ElAfandy

Slimane

et al. 2014

Asia Communications and Photonics Conference 2014

View full text Add to dashboard Cite

show abstract

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

Ayari

Bishop

Mballo

et al. 2019

Adv Materials Technologies

View full text Add to dashboard Cite

The mechanical release of III‐nitride devices using h‐BN is a promising approach for heterogeneous integration. Upscaling this technology for industrial level requires solutions that allow a simple pick‐and‐place technique of selected devices for integration while preserving device performance. An advance that satisfies both of these requirements is demonstrated in this work. It is based on a lateral control of the h‐BN quality, using patterned sapphire with a SiO2 mask, to achieve localized van der Waals epitaxy of high‐quality GaN based device structures. After process fabrication, the devices can be individually picked and placed on a foreign substrate without the need for a dicing step. In addition, this approach could reduce delamination of h‐BN on large diameter substrates because each h‐BN region is smaller, with independent device structures. Discrete InGaN LEDs on h‐BN are grown and fabricated on 2 in. patterned sapphire using a SiO2 mask. A set of devices are selectively released and transferred to flexible aluminum tape. The transferred LEDs exhibit blue light emission around 435 nm. The approach presented here is scalable on any wafer size, can be applied to other types of nitride‐based devices, and can be compatible with commercial pick‐and‐place handlers for mass production.

show abstract

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Cited by 18 publications

References 24 publications

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

Control of the Mechanical Adhesion of III–V Materials Grown on Layered h-BN

GaN Nano-membrane for Optoelectronic and Electronic Device Applications

Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications

Contact Info

Product

Resources

About