Structural and dc conductivity Studies of Cd0.8-x PbxZn0.2S Mixed Semiconductor Compounds

Shekharam, T.; Rao, V. Laxminarasimha; Yellaiah, G.; Kumar, T. Mohan; Nagabhushanam, M.

doi:10.9790/4861-06233439

Cited by 8 publications

(2 citation statements)

References 13 publications

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“…Also, from Table (2), it is clear that the activation energies increase with the increase of the annealing temperature degrees due to the variation of the crystallinty of the film with increasing annealing temperature in terms of partial crystallization. These results are in agreement with [17][18][19][20]. The i-v properties of CdS) 0.75 -(PbS) 0.25 films have been evaluated at voltage of (±1V), with darkness and 25mW/cm 2 of light, at various annealing temperatures (RT, 373,473,573)K. The forward current appears to rise with voltage bias (V), and the dark current is noted to drop with annealing temperatures.…”

Section: Resultssupporting

confidence: 93%

Composite nanostructured growth of (CdS)0.75 (PbS)0.25/Si solar cell and its characterization

Nasir,

Naji,

Ramadhan

2023

JOR

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By using vacuum evaporation, thin films of the (CdS)0.75-(PbS)0.25 alloy have been deposited to form a nanocrystalline composite. Investigations were made into the morphology, electrical, optical and I-V characteristics of (CdS)0.75-(PbS)0.25 films asdeposited and after annealing at various temperatures. According to AFM measurements, the values of grain sizes rise as annealing temperatures rise, showing that the films' crystallinity has been increased through heat treatment. In addition, heat treatment results in an increase in surface roughness values, suggesting rougher films that could be employed in more applications. The prepared films have direct energy band gaps, and these band gaps increase with the increase in the degrees of annealing temperature. Additionally, Urbach energy values decrease with an increase in annealing temperature degrees, indicating a reduction in the tail defects and an enhancement in crystal structure through annealing. The produced films' conductivity raise when temperature in the range (RT-473)K increased, demonstrating that they are semiconducting films. At comparatively lower temperature degrees, the conduction is caused by carriers that are stimulated into localized states at the band edges. At relatively higher temperatures, the conductivity appears to be substantially temperature-dependent. As a result, the conduction mechanism results from carriers being excited into extended states beyond mobility edges. The photovoltaic measurement (I–V) properties, open circuit voltage, short circuit current, efficiency and fill factor of (CdS)0.75-(PbS)0.25 heterostructure cells have been examined under 100mW/cm2 . Interestingly, rising annealing had enhanced photovoltaic cell performances; the solar cell had shown its highest efficiency (0.42%) at 573K. From XRD the structures are polycrystalline with cubic and hexagonal structures indicating that there’s a mix of phases of PbS and CdS, the grain size and intensity raise with annealing temperatures.

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Section: Resultssupporting

confidence: 93%

Composite nanostructured growth of (CdS)0.75 (PbS)0.25/Si solar cell and its characterization

Nasir,

Naji,

Ramadhan

2023

JOR

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“…The rapid increase in the resistivity/energy gap of Cd1-xZnxS were increases with increase in doping concentration, which leads to more usage of conductivity related applications like near infrared solar cells. So it is interesting to prepare samples of higher energy gap with reasonably good electrical conductivity [5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

Structural and Electrical Conductivity Studies of Mg Doped Cd0.8Zn0.2S Semiconductor Compounds by Co-precipitation Method

Vijaya¹,

Rao²,

Nagabhushanam³

et al. 2016

IJERT

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The bulk Cd0.8Zn0.2S semiconductor compounds doped with different amounts of magnesium(Mg) have been synthesized by controlled co-precipitation method from aqueous solution containing cadmium acetate, zinc acetate and thiourea at 0.02 mol% of Mgx(x=0~50ml). The solution mixture was made alkaline by adding 25% of liquid ammonia. The structural and electrical conductivity properties of Cd0.8Zn0.2S:Mg samples have been studied using X-Ray Diffraction (XRD) and Electrical Conductivity Studies. The samples have polycrystalline nature with hexagonal structure observed in the XRD studies. The average crystalline size varied from 30 to 47 nm and also calculated lattice parameters. The low temperature electrical conductivity measurements of Cd0.8Zn0.2S: Mg compounds were studied in the range of 77-300K by Keithley electrometer. It is observed that the increase in Mg doping concentration will increases the electrical conductivity. The values of activation energy were estimated for all the samples and found that the maximum activation energy at lower temperature range is 69.27 meV.

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Role of Temperature on Charge Carrier Transport in Cadmium Lead Sulfide Ternary Semiconductors

Yadaiah¹,

Reddy²,

Rao³

et al. 2023

J. Electron. Mater.

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Structural and dc conductivity Studies of Cd0.8-x PbxZn0.2S Mixed Semiconductor Compounds

Cited by 8 publications

References 13 publications

Composite nanostructured growth of (CdS)0.75 (PbS)0.25/Si solar cell and its characterization

Composite nanostructured growth of (CdS)0.75 (PbS)0.25/Si solar cell and its characterization

Structural and Electrical Conductivity Studies of Mg Doped Cd0.8Zn0.2S Semiconductor Compounds by Co-precipitation Method

Role of Temperature on Charge Carrier Transport in Cadmium Lead Sulfide Ternary Semiconductors

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