Structural and dielectric performance of the Ba(Zn1/3Nb2/3-xSbx)O3 perovskite ceramics

Qasrawi, A.F.; sahin, ethem$Other$Other lhan; Emek, Mehriban; Kartal, Mesut; kargin, serdar $Other$Other

doi:10.1088/2053-1591/ab32d6

Cited by 5 publications

(3 citation statements)

References 22 publications

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“…The error percentage between the experimentally observed peak positions and the theoretically calculated ones in accordance with the software package is less than 1.0%. The calculated lattice parameter and the Miller indices are consistent with literature data [ 6 ] and with the JCPDS Card No:17‐182 for pure Ba(Zn1 /3 Nb 2/3 )O 3 . As shown in Figure 2 a which represents the maximum peak of perovskite ceramics as a function of doping content, lanthanum doping remarkably shifts the position of the peak toward smaller diffraction angles, indicating larger values of lattice constants.…”

Section: Resultssupporting

confidence: 86%

“…[ 10 ] On the other hand, when the solubility limit is significantly exceeded ( x = 0.20), both the lattice constant and crystallites size decrease and the microstrain and defect concentration increase. Compared with our previous investigations, while Sb doping with content of

x = 0.40

being doped in sites of Nb was needed to increase the crystallite size up to 57 nm [ 6 ] and lower the defect concentration to

1.27 \times 10^{11} lines {cm}^{- 2}

, La doping with content of

x = 0.02

in sites of Ba increased the crystallite size up to 65 nm and reduced the defect concentration down to

1.17 \times 10^{11} {lines cm}^{- 2}

. In addition, the lowest sintering temperature of La‐doped samples being 1350 °C is still lower than those doped with Sb which needs a sintering temperature of 1475 °C to reach these values of crystallite sizes and defect concentrations.…”

Section: Resultsmentioning

confidence: 83%

“…[ 1 ] Sb‐doped Ba(Zn 1/3 Nb 2/3 )O 3 ceramics in accordance with the chemical formula Ba(Zn 1/3 Nb 2/3− x Sb x )O 3 decreased the value of the dielectric constant without significant changes in the quality factor. [ 6 ] These works including samarium doping motivated us to try to use another rare earth doping agent in an attempt to enhance the crystallinity and improve the electrical conductivity and the temperature coefficient of the dielectric constants of Ba(Zn 1/3 Nb 2/3 )O 3 perovskite ceramics. Thus, here in this work, we have doped the BZN ceramics with lanthanum.…”

Section: Introductionmentioning

confidence: 99%

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Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Qasrawi

Şahin

Abed

et al. 2020

Physica Status Solidi (b)

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Herein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1−xLax(Zn1/3Nb2/3)O3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02–0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La‐doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 °C. In the temperature range of 20–120 °C, La doping changes the temperature coefficient of dielectric constants from +30 ppm °C−1 in pure samples to −341 ppm °C−1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.

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Section: Resultssupporting

confidence: 86%

x = 0.40

being doped in sites of Nb was needed to increase the crystallite size up to 57 nm [ 6 ] and lower the defect concentration to

1.27 \times 10^{11} lines {cm}^{- 2}

, La doping with content of

x = 0.02

in sites of Ba increased the crystallite size up to 65 nm and reduced the defect concentration down to

1.17 \times 10^{11} {lines cm}^{- 2}

Section: Resultsmentioning

confidence: 83%

Section: Introductionmentioning

confidence: 99%

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Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Qasrawi

Şahin

Abed

et al. 2020

Physica Status Solidi (b)

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Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology

Qasrawi

2024

Physica Status Solidi (a)

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Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10−5 mbar. BaSb films exhibit orthorhombic lattice. Over a wide range of scans, the films are mostly stoichiometric, displaying atomic contents of 50.17 and 49.83 at% for Ba and Sb, respectively. Morphological analyses of these films show the growth of large grains with sizes ranging from 1.64 to 4.14 μm. Dynamic electrical measurements on Ag/BaSb/Ag films are conducted in the frequency domain of 0.01–1.80 GHz. The films display features of voltage‐controlled negative capacitance source (VCNC) and resonance–antiresonance peaks at a critical frequency of 1.64 GHz. Lorentz models spectral analyses on these peaks indicate that they correspond to a high‐frequency capacitance value of 2.8 nF, a density of oscillators of 4 × 1010 cm−3, and a scattering time constant of τ = 100 ns. Additionally, Ag/BaSb/Ag films show a wide variety in the cutoff frequency spectra, making them suitable for high‐frequency applications. The cutoff frequency varies from 2.6 GHz to 1.0 THz as driving frequency increases from 1.0 to 1.64 GHz. The features of VCNC sources, resonance–antiresonance behavior, and high cutoff frequency make BaSb thin films promising for thin‐film transistors and 6 G technology applications.

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Nickel Doping Effects on the Structural and Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Perovskite Ceramics

Qasrawi

Şahin

Emek

2021

Journal of Elec Materi

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Structural and dielectric performance of the Ba(Zn_1/3Nb_2/3-xSb_x)O₃ perovskite ceramics

Cited by 5 publications

References 22 publications

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology

Nickel Doping Effects on the Structural and Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Perovskite Ceramics

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Structural and dielectric performance of the Ba(Zn1/3Nb2/3-xSbx)O3 perovskite ceramics

Cited by 5 publications

References 22 publications

Structural and Dielectric Properties of Ba1−xLax(Zn1/3Nb2/3)O3 Solid Solutions

Structural and Dielectric Properties of Ba1−xLax(Zn1/3Nb2/3)O3 Solid Solutions

Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology

Nickel Doping Effects on the Structural and Dielectric Properties of Ba(Zn1/3Nb2/3)O3 Perovskite Ceramics

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Structural and dielectric performance of the Ba(Zn_1/3Nb_2/3-xSb_x)O₃ perovskite ceramics

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions

Structural and Dielectric Properties of Ba_1−xLa_x(Zn_1/3Nb_2/3)O₃ Solid Solutions