Ba{[Gax,Tax]Ti(1−2x)}O3 ceramics with x equal to 0, 0.0025, 0.005, 0.01, 0.025, and 0.05 have been prepared by conventional solid‐state reaction. Structural and dielectric characterization have been performed to investigate the effect of dipole‐pair substitution concentration on the macroscopic dielectric properties. Ba{[Gax,Tax]Ti(1−2x)}O3 evolves from a classic ferroelectric to a diffuse phase transition (DPT) as x increases. Ba{[Gax,Tax]Ti(1−2x)}O3 for x ≥ 0.01 possesses diffuseness parameters comparable to Pb(Mg1/3Nb2/3)O3‐PbTiO3 (PMN‐PT) and recently reported (Ba0.97Pr0.03)(Ti0.9425Ce0.05)O3 (BPTC), yet it lacks the frequency and temperature dependence of Tm necessary to be a strictly defined relaxor ferroelectric. Additionally, Ba{[Ga0.05,Ta0.05]Ti0.9}O3 possesses a relative permittivity, ɛr, of 700 ± 16% and dissipation factor less than 0.05 at 10 kHz within the temperature range [−75°C, 120°C]. In comparison to BaTiO3, Ba{[Gax,Tax]Ti(1−2x)}O3 possesses enhanced electrical resistivity at and above room temperature. In situ XRD, including Rietveld refinement, have been performed to determine the lattice parameter, coefficient of thermal expansion, and phase transition temperature (Tc) of each composition within the temperature range [RT, 1000°C], thus linking the dielectric properties with the material's structure. These studies have been corroborated by temperature‐dependent Raman spectroscopy to compare the Tc determined by electrical and structural characterization. The properties of Ba{[Gax,Tax]Ti(1−2x)}O3 are discussed in context with available models that describe donor and acceptor dopants spatially separated in the parent matrix, inter‐relating lattice parameter, Curie temperature, and other material properties.