2008
DOI: 10.1016/j.tsf.2007.08.107
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Structural and electrical characterisation of lanthanum nickelate reactively sputter-deposited thin films

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Cited by 24 publications
(21 citation statements)
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“…1173 K for 2 h was found to be the optimal thermal treatment. It has to be noticed that these coatings are annealed at higher temperature than those deposited with stable sputtering conditions [10]. Fig.…”
Section: Elaboration Of La-ni-o Coatingsmentioning
confidence: 99%
See 1 more Smart Citation
“…1173 K for 2 h was found to be the optimal thermal treatment. It has to be noticed that these coatings are annealed at higher temperature than those deposited with stable sputtering conditions [10]. Fig.…”
Section: Elaboration Of La-ni-o Coatingsmentioning
confidence: 99%
“…La 2 NiO 4 coatings have already been produced in our laboratory implementing conventional reactive magnetron sputtering [10]. In this study, we investigate the feasibility of producing thin and dense La 2 NiO 4+ δ coatings as performed in the literature [11][12][13] by reactive magnetron sputtering under unstable conditions using Plasma Emission Monitoring (PEM) [14,15].…”
Section: Introductionmentioning
confidence: 99%
“…[34]. Indeed, PEM is a very suitable technique that allows high rate growth of oxide coatings [24,32,33,37] in comparison to deposition of the same oxide under stable conditions [25,31]. As the main element of Ln 2 NiO 4 is Ln, the PEM control was performed on the La, Nd and Pr targets with a fixed 2.5 A discharge current in order to deposit coating with high sputtering rate without consuming too much the target.…”
Section: Determination Of the Optimal Regulation Setpointmentioning
confidence: 99%
“…Whereas thick layers realized by wet deposition techniques are commonly used as cathodes in IT SOFCs, recent studies deal with the deposition of Mixed Ionic and Electronic Conductors (MIECs) thin layers by physical surface deposi tion processes [7 8]. RMS process may also deposit a cathode layer by the co sputtering of several metallic targets [9]. La 2 NiO 4 is one of the most promising materials in IT SOFCs thanks to its high stability in operation and its relatively low crystallization temperature.…”
Section: Introductionmentioning
confidence: 99%