Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

Siegal, Michael P.; Friedmann, T. A.; Kurtz, S. R.; Tallant, D. R.; Simpson, Regina L.; Domínguez, Francisco José González; McCarty, Kevin F.

doi:10.1557/proc-349-507

Cited by 12 publications

(6 citation statements)

References 13 publications

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“…Film properties obtained using Raman spectroscopy, as well as film stress [3] and electrical resistivity measurements [5], correlate with growth conditions in a manner consistent with the expected trend of sp2: sp3 bonding ratio. In general, film stress and electrical resistivity increase as the sp3 content in the films increases.…”

Section: Introductionsupporting

confidence: 67%

“…The films are deposited on a rotating ptype Si (100) wafer. Details of the deposition process have been presented elsewhere [3]. The la$er energy density varies between 10 and 45 J/cm2, and the deposition rate is approximately lA/sec.…”

Section: Methodsmentioning

confidence: 99%

“…The stress in the films is obtained by measuring the curvature of the wafers before and after deposition, using a stylus profilometer [3]. The residual stresses are calculated using:…”

Section: Methodsmentioning

confidence: 99%

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A Comparative Study of Residual Stresses and Microstructure in a-tC Films

et al. 1995

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We compare the microstructure of highly tetrahedrally-coordinated-amorphous carbon (atC) films prepared by pulsed laser deposition (PLD), measured using both small angle x-ray scattering (SAXS) and x-ray reflectivity, with other physical properties such as film stress and electrical resistivity. These properties are controlled by the film growth conditions and film thicknesses. Films prepared under vacuum conditions exhibit a shift in the measure4 mass density, as a function of laser energy density. The density for films approximately 600A thicg approach that of crystalline diamond. The measured densities for thicker, approximately l OOOA films, exhibit a smaller shift, and a lower density value. This shift correlates to observed changes in film stress and electrical resistivity. The small angle signal of the reflectivity spectra suggests the presence of layering, or in-plane density variations or a combination of both within the films.

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Section: Introductionsupporting

confidence: 67%

Section: Methodsmentioning

confidence: 99%

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A Comparative Study of Residual Stresses and Microstructure in a-tC Films

et al. 1995

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“…The details of the a-D film deposition have been reported elsewhere 71,72 . The a-D thin films were deposited by pulsed laser deposition from a graphite target which resulted in highly sp3-bonded, but amorphous, carbon films.…”

Section: Amorphous Diamond Thin Films On Siliconmentioning

confidence: 99%

In‐SituNanoindentation in the Transmission Electron Microscope

Minor

2012

In‐Situ Electron Microscopy

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This dissertation presents the development of the novel mechanical testing technique of in situ nanoindentation in a transmission electron microscope (TEM).This technique makes it possible to simultaneously observe and quantify the mechanical behavior of nano-scale volumes of solids.Chapter 2 details the unique specimen preparation techniques employed to meet the geometrical constraints of the in situ experiments. These techniques include bulk silicon micromachining and the use of a focused ion beam. In section 2.4 a method of voltage-controlled mechanical testing is derived theoretically and proven experimentally. This method enables the quantification of the mechanical behavior during in situ nanoindentation experiments.Three classes of material systems were studied with this new technique: (1) bulk single crystal, (2) a soft thin film on a harder substrate and (3) a hard thin film on a softer substrate. Section 3.2 provides the first direct evidence of dislocation nucleation in single crystal silicon at room temperature. In contrast to the observation

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“…The details of the deposition process are similar to those described elsewhere. [5] Films nominally 90 nm thick are grown in a vacuum chamber with base pressure < Torr with laser energy density = 45 J/cmZ. The Si substrates are precleaned with acetone, methanol, and a brief immersion in dilute HF prior to deposition.…”

Section: Introductionmentioning

confidence: 99%

Structural Characterization of the Thermal Evolution of Tetrahedrally Coordinated Amorphous Carbon Films

et al. 1997

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Ju 0 2 #,@We present the results of a post-deposition annealing structural study on amorph @-@n us tetrahedrally-coordinated carbon (a-tC) films on Si( 100) prepared by pulsed-laser deposition.Films as-deposited and post-annealed at 200,300,400,500 and 600 'Cy respectively, are studied using combined x-ray reflectivity and low-angle scattering measurements. The scans are fit to the Fresnel equations to obtain values for average film density, film and interface thickness, and film and interface roughness. We observe a correlation between the evolution of film density, roughness and the spacing of quasi-periodic structures in the films as a function of annealing temperature. We relate the evolution of these structural features with previous measurements of the resistivity and the observed stress release in these films.

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Structural and Electrical Characterization of Highly Tetrahedral-Coordinated Diamond-Like Carbon Films Grown by Pulsed-Laser Deposition

Cited by 12 publications

References 13 publications

A Comparative Study of Residual Stresses and Microstructure in a-tC Films

A Comparative Study of Residual Stresses and Microstructure in a-tC Films

In‐SituNanoindentation in the Transmission Electron Microscope

Structural Characterization of the Thermal Evolution of Tetrahedrally Coordinated Amorphous Carbon Films

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