Structural and electrical characterization of ZnO-based homojunctions

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

“…The temperature dependence of electrical characteristics of these devices has been widely investigated in the literature [35][36][37][38][39][40][41][42][43][44][45][46]. In our previous work [20], we have investigated temperature and voltage dependent current transport mechanisms in GaAs/AlGaAs single-quantum-well lasers using forward and reverse bias I-V measurements in the temperature range of 80-360 K. The analysis of the experimental I-V data of the studied structures indicated that the current-transport was controlled by the Thermionic Field-Emission (TFE) mechanism below 170 K and Thermionic Emission (TE) mechanism above 200 K. The high values of n especially at low temperatures showed that the conduction is controlled by TFE [7,20].…”

Temperature and voltage dependent current-transport mechanisms in GaAs/AlGaAs single-quantum-well lasers

“…There are many methods of determining the SBH based on I-V, C-V and photoelectric measurements in the literature [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29]. Detailed knowledge of the current-transport process involved is essential in order to extract the barrier parameters, namely, BH, n and R s .…”

Correlation between the surface state and optical properties of S6 site and C2 site in nanocrystalline Eu3+:Y2O3

“…One-dimensional (1D) nanostructures, including nanorods, nanowires, nanofibers, and nanotubes, have attracted extensive interest over the past decades due to their potential application in a wide field [1][2][3]. Among all the nanostructures, rare-earth (RE) compounds have been extensively used in the fields of highperformance luminescent devices, magnets, catalysts, and other functional materials.…”