Structural and electrical properties of SnS2 thin films

Influence of tin precursor concentration on physical properties of nebulized spray deposited tin disulfide thin films

“…These values suggest that the deep donor levels in lower precursor concentrations change to shallow donor levels for higher precursor concentrations in accordance with the results in the literature [6,45]. Similar activation energy values were reported by Voznyi et al [32]. Vijayakumar et al [22] also reported the activation energy of SnS 2 film as 0.47 eV and 0.12 eV for the samples prepared at the substrate temperature of 398 K and 423 K, respectively, using spray pyrolytic method.…”

“…It has been observed that plateletshaped SnS 2 grains are found to increase in size with an increase in precursor concentrations. The definite and well-grown plate-like formation of grains was observed for the film prepared with the precursor concentration of 0.2 M. Similar platelet-shaped grains for SnS 2 films were observed in the earlier reports [13,31,32]. However, the surface morphology of the film prepared with the precursor concentration of 0.25 M is distinctly different from other SEM images.…”

Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films

“…Similar to our previous work [24], SnS 2 thin films were obtained in a vacuum chamber VUP-5M by the CSS method. A detailed description and scheme of the device for producing the thin films is available in [9].…”

Balancing Light Absorption and Charge Transport in Vertical SnS2 Nanoflake Photoanodes with Stepped Layers and Large Intrinsic Mobility

“…Similarly, the roomtemperature Raman characterization (Figure 3e) also suggests that our optimized nanoflakes are of high quality. [22,31,40,41] According to a previous report, [40] 2HSnS 2 also exhibits a single band at 205.5 cm −1 , unlike 4HSnS 2 or 18RSnS 2 that exhibit multiple bands near that wavenumber. [22,31,40,41] According to a previous report, [40] 2HSnS 2 also exhibits a single band at 205.5 cm −1 , unlike 4HSnS 2 or 18RSnS 2 that exhibit multiple bands near that wavenumber.…”

“…Several methods of synthesizing vertically oriented SnS 2 nanoflakes on conductive substrates have been reported in the literature such as hydrothermal reaction, [11] chemical vapor deposition (CVD), [28,30] and close space sublimation (CSS). [20,31] However, only a few of these methods have been used to opti mize the nanoflakes for photoelectrochemical applications. In one case, [28] vertical SnS 2 nanoflakes were synthesized on a fluorinedoped tin oxide (FTO) current collector using CVD, and a photocurrent of ≈1.5 mA cm −2 was obtained at the ther modynamic potential for water oxidation (1.23 V RHE ) in 0.5 m Na 2 SO 4 .…”