2014
DOI: 10.1016/j.apsusc.2014.02.118
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Structural and electrical properties of nitrogen-doped ZnO thin films

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Cited by 23 publications
(14 citation statements)
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“…The DRS results were used to calculate the band gap values of the semiconductor for each sample, using the Kubelka-Munk model [33]. The calculated band gap values for the samples show small deviations from the values of the literature [34][35][36] (Table 2), which indicates an approximate gap of 3.2 eV. Band gap values samples differ from band gap values obtained for samples synthesized by solvothermal method (E bg = 3.31 eV) and for ZnO quantum dots (E bg = 3.41-3.47 eV) [36].…”
Section: Optical Behaviormentioning
confidence: 99%
“…The DRS results were used to calculate the band gap values of the semiconductor for each sample, using the Kubelka-Munk model [33]. The calculated band gap values for the samples show small deviations from the values of the literature [34][35][36] (Table 2), which indicates an approximate gap of 3.2 eV. Band gap values samples differ from band gap values obtained for samples synthesized by solvothermal method (E bg = 3.31 eV) and for ZnO quantum dots (E bg = 3.41-3.47 eV) [36].…”
Section: Optical Behaviormentioning
confidence: 99%
“…In contrast, metal doping is more likely to induce the formation of vacancies or defect states that can serve as the recombination center for photogenerated electrons and holes. Compared with other nonmetal dopants, nitrogen [41][42][43][44][45][46], carbon [47][48][49][50][51] and sulfur [52][53][54] have been more extensively studied in recent years. Doping ZnO with these nonmetal elements has shown to be promising approaches to narrow the band gap and thus induce stronger visible-light absorption.…”
Section: Introductionmentioning
confidence: 99%
“…N could be used to obtain a stable p-type N-doped ZnO (ZnO:N) semiconductor structure [29][30][31], resulting in the improvement of photocatalytic activity [32][33][34][35][36][37][38][39][40][41]. Theoretical calculations point out that N is the best superficial acceptor candidate for ZnO [42] while Amiri et al [43] have analyzed the possible source of ferromagnetism in ZnO:N compounds by using ab-initio calculations.…”
Section: Introductionmentioning
confidence: 99%