Structural and electrical properties of co-evaporated Cu(In,Ga)Se2 thin films with varied Cu contents

CIGS absorber preparation by non-vacuum particle-based screen printing and RTA densification

“…P40 film prepared by 650°C normal loading sintering shows the highest carrier concentration of 1.23 Â 10 15 cm À3 . Although this value is lower than that of stoichiometric CIGS films prepared by high temperature co-evaporation deposition, which shows a CIGS film carrier concentration of 10 16 -10 17 cm À3 [3], it is of the same order as the carrier concentration of CIGS absorbers prepared by the ordinary vacuum co-evaporation deposition process [30,31].…”

“…The electrical properties of crystalline CIGS films are investigated by Hall Effect measurement [30,31]. The carrier concentrations of P20, P40, P60 CIGS films are shown in Fig.…”

“…Since normal loading during sintering decreases the pore sizes and high temperature sintering promotes grain growth, Hall mobility increases with increasing sintering temperatures and when normal loading has been applied during sintering. Film resistivity is proportional to the reciprocal of the product of carrier concentration and Hall mobility [31]. Resistivity is calculated and it decreases with the increase of the sintering temperature, reaching a steady value at RTA temperature of 650°C.…”