1999
DOI: 10.1002/(sici)1521-3951(199904)212:2<307::aid-pssb307>3.0.co;2-z
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Structural and Electronic Properties of Semiconductor Cx(BN)1-x Alloy

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Cited by 9 publications
(2 citation statements)
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“…We found that the LO-TO splitting decreases with increasing hydrostatic pressure. This behaviour indicates again an increase of the bong ionicity with pressure, which is in contrast with the behaviour of most III-V and II-VI semiconductors excluding III-V nitrides [21,[25][26][27][28][29][30][31][32][33], III-V bismuth [34][35][36][37][38][39][40][41] and finally III-V boron [42][43][44][45][46][47].…”
Section: Bessupporting
confidence: 59%
“…We found that the LO-TO splitting decreases with increasing hydrostatic pressure. This behaviour indicates again an increase of the bong ionicity with pressure, which is in contrast with the behaviour of most III-V and II-VI semiconductors excluding III-V nitrides [21,[25][26][27][28][29][30][31][32][33], III-V bismuth [34][35][36][37][38][39][40][41] and finally III-V boron [42][43][44][45][46][47].…”
Section: Bessupporting
confidence: 59%
“…Badzian [16] has synthesized mixed crystals of diamond and c-BN by a high-temperature phase transformation technique. Other theoretical calculations are investigated using an empirical pseudopotential method [20] in order to study the electronic properties of C x (BN) 1−x .…”
Section: Introductionmentioning
confidence: 99%