Structural and electronic properties of Ga2Se3

Abstract

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Optically decomposed near-band-edge structure and excitonic transitions in Ga2S3

“…GaAs and InP) having the strongest covalent bond, the misvalency between the III and VI atoms usually renders a III-VI compound possessing different stoichiometries, diversified crystal phases, and various lattice forms123. For the gallium chalcogenides, GaS and Ga 2 S 3 are the general constituents existed in the gallium sulfides45 while the GaSe and Ga 2 Se 3 are the common stoichiometric elements formed in the gallium selenides67. The GaSe and GaS compounds may crystallize in the hexagonal layered structure but possess different stacking formula (i.e.…”

“…The stacking deviation in GaX (X = S, Se) will make GaSe a direct semiconductor with an energy gap close to 2 eV whereas the GaS material becomes an indirect semiconductor with an indirect gap of ~2.53 eV4. Ga 2 Se 3 may possess a defective zinc-blende structure in which one-third part of cation sites are vacant randomly in the lattice7. It is naturally a defect semiconductor with a direct band gap around 2–2.4 eV910.…”

Correlation between morphology, chemical environment, and ferromagnetism in the intrinsic-vacancy dilute magnetic semiconductor Cr-doped Ga2Se3/Si(001)

“…5 In recent models of defect mediation in dilute RTFM materials, ferromagnetic ordering is acquired only in the presence of structural defects, typically having open volume character, including vacancies, grain boundaries and surfaces, [6][7][8][9][10] which are difficult to control reproducibly. The intrinsic vacancy structure of Ga 2 Se 3 , where one-third of cation sub-lattice sites are vacant and the chalcogenide lone-pair states lining vacancy rows form anisotropic band-edge states, 11,12 is intermediate between band-and defectmediated systems, making it a promising host for RTFM DMS with enhanced propensity both for RTFM and carrier spin polarization. This paper focuses on the correlation between magnetism and the local structural, chemical and electronic order in the silicon-compatible material Cr-doped Ga 2 Se 3 , which we find exhibits evidence for room temperature ferromagnetism.…”

Lattice Thermal Expansion and Ionicity for III2–VI3 Binary Defect Tetrahedral Compound Semiconductors and Their Alloys

“…1 is applied. That is the case for many compounds that belongs to the binary group III 2 -VI 3 as well as their alloys [8,17,19,20]. Calculated values of the lattice thermal expansion reported in Table 2 were obtained, using Eq.…”

“…The interest for this binary group compounds has been renewed in the last few years in two respects: first, they, under particular growth conditions [5], may form as II-VI/III-V interfaces and modify the electronic properties of junctions such as in optoelectronics, radiation detectors, and electrical switching applications [6,7] and second, they have been successfully prepared in bulk [8,9] as well as nanoscale size crystals, nanowires, and thin films [10][11][12][13].…”