Structural and electronic properties of Ga1−xInx As1−yNy quaternary semiconductor alloy on GaAs substrate

Aslan, Metin; Yalcin, Battal G.; Ustundag, M.

doi:10.1016/j.jallcom.2011.12.020

Cited by 25 publications

(7 citation statements)

References 25 publications

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“…Free energy difference or relative enthalpies ( H − H A ) as shown in Table were calculated from enthalpy difference between the considered structure ( H ) and structure type A in the same composition ( H A ). Stability of three compositions (2In−N, 3In−N and 4In−N) can be determined by formation enthalpy ( H f ), expressed as Equation :

true H_{f} = H_{{In}_{x} {Ga}_{27 - normalx} {As}_{26} normalN} - ([], H_{27 GaAs} + x H_{In, solid} + H_{normalN, solid} - x H_{Ga, solid} - H_{As, solid})

…”

Section: Resultsmentioning

confidence: 99%

Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

et al. 2019

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We present the effects of In−N distribution and high pressure on the zincblende phase (0–5 GPa) of In x Ga 1− x As 0.963 N 0.037 ( x =0.074, 0.111 and 0.148). Structural, electronic, and optical properties are analyzed, and it is found that non‐isotropic distribution of In−N (type C) possesses the minimum free energy for the InGaAsN conventional cell system. An increasing indium content reduces the formation enthalpy of InGaAsN. The formation enthalpy, conduction band minimum, strength of covalent bonds, and electron density differences in free space of InGaAsN are decreased under high‐pressure conditions. The dielectric performance and static permittivity of InGaAsN are lower than that of GaAs, for which the dielectric performance transforms to conductor performance at high frequency. The optimum photoabsorption coefficient is found at the composition of In 0.111 Ga 0.889 As 0.963 N 0.037 (3In−N), which very well relates to the literature.

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true H_{f} = H_{{In}_{x} {Ga}_{27 - normalx} {As}_{26} normalN} - ([], H_{27 GaAs} + x H_{In, solid} + H_{normalN, solid} - x H_{Ga, solid} - H_{As, solid})

…”

Section: Resultsmentioning

confidence: 99%

Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

et al. 2019

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“…Universitas Scientiarum Vol. 24 (3): 523-542 http://ciencias.javeriana.edu.co/investigacion/universitas-scientiarum such as magnetron sputtering, are being explored. The aim of these nanostructure preparation alternatives is to obtain good structural quality III-V semiconductors compatible with traditional semiconductor technology [13][14][15][16].…”

Section: Centro De Investigación Ymentioning

confidence: 99%

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

et al. 2019

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Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches. In this work we report on the manufacture of a nanostructures consisting of alternating layers of In and GaAs on a silicon substrate by magnetron sputtering. Furthermore, we characterized the produced nanostructures using secondary ion mass spectroscopy (SIMS), X-ray diffraction analysis, and Raman spectroscopy. SIMS revealed variation in the concentration of In atoms across In/GaAs/In interphases, and X-ray diffraction revealed planes corresponding to phases associated with GaAs and InAs due to In interfacial diffusion across GaAs layers. Finally, in order to study the composition and crystalquality of the manufactured nanostaructures, Raman spectra were taken using laser excitation lines of 452 nm, 532 nm, and 562 nm at different points across the nanostructures.This allowed to determine the transverse and longitudinal optical modes of GaAs and InAs,characteristic of a two-mode behavior. An acoustic longitudinal vibrational mode LA(Γ) of GaAs and an acoustic longitudinal mode activated by disorder (DALA) were observed. These resulted from the substitution of Ga atoms for In atoms in high concentrations due to the generation of Ga(VGa) and/or Arsenic(VAs) vacancies.This set of analyses show that magnetron sputtering can be aviable and relatively low-cost technique to obtain this type of semiconductors.

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“…(5) and ( where e 0 is the permittivity of free space, c is the speed of light, k is the wavelength of the laser light, and n 0 is the linear refractive index of the glass. At last, the absolute values of third-order nonlinear susceptibility v (3) for Cu quantum dots embedded in sodium borosilicate is calculated by Eq. (7) [31].…”

Section: Third-order Optical Nonlinearities With Z-scan Measurementsmentioning

confidence: 99%

“…Over the past two decades, much attention has been focused on the nonlinear optical progresses of low-dimensional materials such as quantum dots and quantum wires [1][2][3]. Quantum dots whose radii are smaller than the bulk exciton Bohr radius constitute a class of materials intermediate between molecular and bulk forms of matter.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, characterization, and third-order nonlinear optical properties of copper quantum dots embedded in sodium borosilicate glass

Zhong

Xiang

Zhao

et al. 2012

Journal of Alloys and Compounds

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Structural and electronic properties of Ga1−xInx As1−yNy quaternary semiconductor alloy on GaAs substrate

Cited by 25 publications

References 25 publications

Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

Pressure‐Induced Formation of Quaternary Compound and In−N Distribution in InGaAsN Zincblende from Ab Initio Calculation

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

Synthesis, characterization, and third-order nonlinear optical properties of copper quantum dots embedded in sodium borosilicate glass

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