Structural and Electronic Properties of Stepped Semiconductor Surfaces

Henzler, M.; Clabes, J. G.

doi:10.7567/jjaps.2s2.389

Cited by 76 publications

(18 citation statements)

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“…the distinct correlation between the SPV distribution and the angle of inclination towards the (111) plane, found by Henzler and Clabes at cleaved Si(111) crystals. This correlation was obtained by comparing electron-beam-based scanning SPV measurements and scanning optical re¯ection measurements [240].…”

Section: E-beam Analysismentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,529

804

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Section: E-beam Analysismentioning

confidence: 99%

Surface photovoltage phenomena: theory, experiment, and applications

Kronik

Shapira

1999

Surface Science Reports

1,529

804

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“…A double-stepped, singledomain substrate allows the growth of III/V bilayers on Si (100) without antiphase domains [20]. However, only Si substrates of specific misorientation exhibit the singles-domain structure after annealing; specifically, substrates offcut 4° towards the [110] direction have been used for GaAs/Si growth [21]. Single-S-domain surfaces can also be produced by Si homoepitaxy on betteroriented substrates, but the resulting surface is unstable to domain separation at typical growth temperatures [8,12].…”

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confidence: 99%

Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1

Bedrossian

Klitsner

1992

Phys. Rev. Lett.

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Preferential annihilation of mobile surface vacancies at the ends, rather than the sides of dimer rows leads to a new, nonequilibrium, single-domain phase of Si(100) that is not accessible by epitaxial growth but is stable at moderate temperatures (r~450°C). These results emerge from a tunneling microscope study of layer-by-layer removal of Si from Si (100) under 225-eV Xe-ion bombardment. PACS numbers: 79.20.Rf, 61.16.Di, 68.35.FxSeveral recent experiments using diffraction oscillations [1,2] and tunneling microscopy (STM) [3,4] have established (i) that the evolution of both metal surfaces and Si under low-energy ( < 250 eV) ion bombardment is mediated by mobile surface vacancies created during sputtering, and (ii) that aspects of surface evolution under low-energy sputtering can be described in terms analogous to those associated with epitaxial growth. Specifically, mobile surface vacancies can nucleate monolayer-deep depressions, or "vacancy islands," and can annihilate at step edges. An understanding of surface vacancy kinetics is therefore an important component of a general description of low-energy-ion/solid interactions, and in particular of the development of advanced growth techniques that employ ion-beam stimulation [5,6].We analyze the kinetics of surface vacancies on silicon via the natural analogy with adatom kinetics in growth. Recent STM studies provide a quantitative description of the anisotropic adatom diffusion and accommodation in Si/Si(100) homoepitaxy [7,8]. In particular, they show that preferential incorporation of impinging atoms at the ends rather than the sides of dimer rows is responsible for the more rapid progression of the "ragged" (SB) steps relative to the "straight" (S A ) steps and, consequently, the metastable enhancement of the domain (B) with dimer rows perpendicular to the step edges. (We employ Chadfs notation for step classification [9].)Here we report the first demonstration of anisotropic, surface vacancy annihilation on Si(100), using STM to observe the relative retraction of straight and ragged steps on that surface following sputtering. We show that the formation of a new, single-,4-domain Si (100) surface, which is stable at common growth temperatures (T ~~ 450°C), is a consequence of the anisotropy of vacancy annihilation at steps.Si(100) wafers, offcut 0.2° toward the [110] direction as measured by x-ray diffraction, were initially cleaned chemically [10] and then transferred to an ultrahigh vacuum chamber, where 1.0-keV Xe sputtering followed by annealing at 1150°C produced a strong 2x1 pattern in low-energy electron diffraction. As shown in Fig. 1, the misorientation results in roughly equally spaced terraces, separated by single atomic steps. The 90° relative orientation of dimer rows on adjacent terraces leads to alternating A and B domains; type A has dimer rows running parallel to the step edge, and type B consists of dimers that run perpendicular to the step edge.A surface prepared in this manner was exposed to 225-eV Xe-ion bombardment at a flux of 0.33 /...

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“…Across such steps, the crystallography of the bulk Si forces the dimers to rotate by 90 • . However, when Si is miscut by approximately 4 • off the (001) plane, the distance between steps becomes sufficiently small that the surface adopts a new structure, in which two single-height steps are replaced by one doubleheight step [26,27]. Figure 3b, obtained on a clean, 4 • -miscut Si(001) surface, shows that across such a double-height step the dimer orientation perseveres, so that such surfaces consist almost entirely of only one Si=Si dimer orientation.…”

Section: Resultsmentioning

confidence: 99%

Scanning tunneling microscopy of cyclic unsaturated organic molecules on Si(001)

Hovis¹,

Liu²,

Hamers³

1998

Applied Physics A: Materials Science & Processing

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Scanning tunneling microscopy and optical spectroscopy techniques have been utilized to investigate the formation of ordered organic monolayer films on the (001) face of silicon. While norbornadiene produces only disordered films, cyclopentene and 1,5-cyclooctadiene both produce monolayer films that are ordered translationally and rotationally. The rotational orientations of the molecules arise from the directional interaction of the π orbitals of the starting alkene with the π orbital of the dimers comprising the reconstructed Si(001) surface, with the Si(001) surface acting as a template for determining the directionality of molecules in the subsequent organic film. Using single-domain Si(001) samples, it is shown that the molecular films also exhibit anisotropy in optical properties when measured on centimeter length scales.Chemisorption of organic molecules on Si(001) surfaces typically involves fragmentation of the molecule. In the specific case of unsaturated organic molecules, however, another mode of bonding is possible. As depicted in Fig. 1, alkenes Fig. 1. Schematic depiction of cycloaddition reaction between Si=Si dimers or Si(001) surface and an unsaturated alkene, cyclopentene * Corresponding author (molecules having one or more double bonds) can bond to the Si(001) surface by breaking the π bonds of the alkene and the Si(001) dimers and forming two new sigma (σ) bonds. This mode of bonding is interesting and unique because it does not involve fragmentation of the organic molecule and therefore provides better control of the atomic-level structure than dissociative reactions would. Previous studies have shown that this mode of bonding is utilized in the bonding of ethylene and acetylene to the Si(001) surface [1][2][3][4][5][6][7][8]. We have recently shown that this mode of bonding can be utilized with larger organic molecules, leading to the formation of ordered organic monolayer films at room temperature [9][10][11][12][13][14].

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Structural and Electronic Properties of Stepped Semiconductor Surfaces

Cited by 76 publications

References 0 publications

Surface photovoltage phenomena: theory, experiment, and applications

Surface photovoltage phenomena: theory, experiment, and applications

Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2×1

Scanning tunneling microscopy of cyclic unsaturated organic molecules on Si(001)

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