Structural and Ferroelectric Properties of Bi4Ti3O12/TiO2 Thin Films Prepared by Two-Dimensional RF Magnetron Sputtering

Abstract

The Bi 4 Ti 3 0 12 (BIT) thin films with Ti0 2 layer were prepared on Pt/Ti/S i0 2 /Si substrates by two-dimensional RF magnetron sputtering using Ti0 2 and Bi 2 0 3 targets. In order to prevent the interdifussion of BIT thin film, we inserted the Ti0 2 layer between BIT thin film and Pt electrode. The BIT thin film with Ti0 2 layer consists of small grain with a diameter of 80 nm. The orientation of BIT thin film depends on the fi lm thickness ofTi0 2 layer. When the thickness of Ti0 2 layer is I 0 nm, the postannealed BIT thin film exhibited a good P-E hysteresis loop. The leakage current (IL) at voltage of I 0 V was 10• 6 A/cm 2 , although the IL of BIT thin fi lm with no layer was 10• 5 A/cm 2 .