Structural and impedance studies on LaF3 thin films prepared by vacuum evaporation

Vijayakumar, M.; Selvasekarapandian, S.; Gnanasekaran, T.; Fujihara, Shinobu; Koji, Shinnosuke

doi:10.1016/j.jfluchem.2004.02.001

Cited by 27 publications

(18 citation statements)

References 22 publications

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“…In fact, F 1s contributions for LaOF and LaF 3 have been reported at the same positions (BE » 684.8 eV). [1,6,8,15,20] Conversely, only the low BE component was retained for T ³ 450 C, in good agreement with previous considerations. As a whole, XPS surface results supported the considerations related to structural analyses.…”

Section: Surface and In-depth Chemical Composition: Xps And Sims Invesupporting

confidence: 89%

CVD of Lanthanum Oxyfluoride-Based Thin Films from a Lanthanum β-Diketonate Diglyme Precursor

Barreca

Gasparotto

Maragno

et al. 2005

Chem. Vap. Deposition

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Lanthanum oxyfluoride-based thin films were grown on SiO 2 and Si(100) by CVD from La(hfa) 3´d iglyme (Hhfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; diglyme = bis(2-metoxyethyl)ether), acting as the source for both lanthanum and fluorine. Film syntheses were performed in an atmosphere of nitrogen + wet oxygen, with particular attention paid to the structural and compositional evolution as a function of the deposition temperature (200±500 C). To this aim, specimens were subjected to a multi-technique characterization by means of glancing incidence X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS), secondary ion mass spectrometry (SIMS), and atomic force microscopy (AFM). The formation of nanophasic (crystallite size < 30 nm) films containing LaOF, with a cleaner precursor conversion at the highest deposition temperatures, is evidenced and discussed, highlighting the most critical parameters for obtaining lanthanum oxyfluoride coatings with controlled properties.

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Section: Surface and In-depth Chemical Composition: Xps And Sims Invesupporting

confidence: 89%

CVD of Lanthanum Oxyfluoride-Based Thin Films from a Lanthanum β-Diketonate Diglyme Precursor

Barreca

Gasparotto

Maragno

et al. 2005

Chem. Vap. Deposition

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“…Similar results have been reported by Vijayakumar et al for lanthanum fluoride thin films [11]. Figure 2 shows the scanning electron microscope image of cerium fluoride thin films.…”

Section: Resultssupporting

confidence: 87%

“…The bulk capacitance values are found to be in the order of Pico farad (pF) which indicates the nature as grain interior resistance [11]. The center of the semicircle falls below the real axis, indicating the non-Debye nature of the material.…”

Section: Impedance Analysismentioning

confidence: 93%

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Electrical properties of cerium fluoride thin films

Dorai

Selvasekarapandian

Nithya

et al. 2010

Ionics

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Thin films of ionic conductors have low internal resistance. Hence, it could be used as an electrolyte material in sensors to operate at ambient temperatures. Cerium fluoride, a unipolar fluoride ion conductor, has got a different application in electrochemical sensor. In the present work, cerium fluoride thin films have been prepared by physical vapor deposition method and their electrical properties are studied. X-ray diffraction studies reveal the polycrystalline nature of the prepared thin films and the structure of the material. Scanning electron microscopy (SEM) images show grain-like structures. Conductivity analysis of the thin films has been studied by ac impedance analysis and the maximum conductivity value is found to be 1.04×10 −6 S cm −1 . The impedance spectra emphasize intergranular conduction in the prepared thin films.

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“…[4] Another application, a Pt/LaF 3 gas sensor based on Pt and LaF 3 layers acting as the chemically sensitive components, has been used for the detection of fluorine, hydrogen fluoride, fluorocarbons, and oxygen. [14,15] The most often used techniques for depositing LaF 3 thin films have been physical vapor deposition (PVD) methods, e.g., electron-beam evaporation (EBE), [4,11,[16][17][18][19][20][21][22] ion-assisted deposition, [5,7,13,23] thermal evaporation, [3,[6][7][8]12,16,18,[24][25][26][27][28][29][30][31][32][33][34] ionbeam sputtering, [7,18,28] radio frequency magnetron sputtering, [35,36] and molecular beam epitaxy. [37][38][39][40][41] Only a few CVD methods have been used for depositing LaF 3 thin films, i.e., pyrolysis of a single source precursor La(hfa) 3 diglyme complex (hfa ¼ hexafluoroacetylacetonate), [42] or by using HF or...…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

Pilvi

Puukilainen

Arstila

et al. 2008

Chemical Vapor Deposition

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Lanthanum fluoride is a vacuum ultraviolet (VUV) transparent material which is widely used in optical applications. An atomic layer deposition (ALD) process is developed for depositing lanthanum fluoride thin films for the first time. LaF 3 films are grown at 225-350 -C using La(thd) 3 and TiF 4 as precursors. The crystallinity, morphology, composition, thicknesses, and refractive indices of the films are analyzed by X-ray diffraction/reflection (XRD/XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM), time-of-flight elastic recoil detection analysis (TOF-ERDA), and UV-vis spectrophotometry. Electrical properties, such as permittivity and leakage current density, are also studied. An exceptionally high growth rate of about 5 Å per cycle is achieved at 225-250 -C. The films are polycrystalline, the refractive indices vary between 1.57 and 1.61, and the permittivity is 12.3. The impurities detected in the LaF 3 film are Ti, C, O, and H. The level of all of these tends to decrease with increase in the deposition temperature, and is only 3.5 at.-% at 350 -C.

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Structural and impedance studies on LaF3 thin films prepared by vacuum evaporation

Cited by 27 publications

References 22 publications

CVD of Lanthanum Oxyfluoride-Based Thin Films from a Lanthanum β-Diketonate Diglyme Precursor

CVD of Lanthanum Oxyfluoride-Based Thin Films from a Lanthanum β-Diketonate Diglyme Precursor

Electrical properties of cerium fluoride thin films

Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors

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Structural and impedance studies on LaF3 thin films prepared by vacuum evaporation

Cited by 27 publications

References 22 publications

CVD of Lanthanum Oxyfluoride-Based Thin Films from a Lanthanum β-Diketonate Diglyme Precursor

CVD of Lanthanum Oxyfluoride-Based Thin Films from a Lanthanum β-Diketonate Diglyme Precursor

Electrical properties of cerium fluoride thin films

Atomic Layer Deposition of LaF3 Thin Films using La(thd)3 and TiF4 as Precursors

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Atomic Layer Deposition of LaF₃ Thin Films using La(thd)₃ and TiF₄ as Precursors