Structural and luminescent properties of ZnO epitaxial film grown on Si(111) substrate by atmospheric-pressure MOCVD

Chen, Yufeng; Jiang, Fengyi; Wang, Li; Chang, Zheng; Dai, Jiangnan; Pu, Yong; Fang, Wenqing

doi:10.1016/j.jcrysgro.2004.12.019

Cited by 29 publications

(20 citation statements)

References 22 publications

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“…As an important member of the wide bandgap semiconductor family, ZnO has attracted much attention from researchers due to its excellent optical and electrical properties. ZnO is a group II-VI direct bandgap semiconductor material with a bandgap width of 3.37eV at room temperature and a hexagonal wurtzite structure with lattice constants a=0.325nm and c=0.52nm [3,4]. As a new functional material, ZnO has strong ability of resisting high energy proton bombardment and thermal stability, is not easily oxidized in the atmosphere, has high cohesive energy and melting point, strong binding ability, exciton binding energy up to 60meV , much larger than the room temperature thermal ionization energy (26meV), indicating that ZnO excitons have good stability.…”

Section: Introductionmentioning

confidence: 99%

Characterization of ZnO films prepared by sol-gel method

Zhang¹,

Sun²,

Qi³

et al. 2017

AIP Conference Proceedings

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Section: Introductionmentioning

confidence: 99%

Characterization of ZnO films prepared by sol-gel method

Zhang¹,

Sun²,

Qi³

et al. 2017

AIP Conference Proceedings

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“…Lattice period of silicon and sapphire have large misfits with lattice period of hexagonal ZnO (≈ 41% and ≈ 18%, respectively) [4]. Moreover, Si undergoes oxidation in argon-oxygen ambient at ZnO growth and therefore formation of amorphous SiO x layer occurs [5]. This layer causes deterioration of the crystal quality of growing ZnO layer.…”

Section: Introductionmentioning

confidence: 99%

Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering

et al. 2008

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“…The visible emission comes from the defect level of the ZnO films [5][6][7][8] . The samples exhibit the n-type conduction in the hot-probe measurement, and the oxygen vacancy (V O ) is the main defect for the n-type ZnO films [15] .…”

Section: Analysis Of the Pl Spectramentioning

confidence: 99%

“…The emission peaks of ZnO films mainly contain an excition peak (∼380 nm) [2][3][4][5][6][7] and a green peak (∼510 nm) [6,7] . With the further study of the ZnO films photoluminescent (PL) properties, blue peaks at various wavelengths have been reported, e.g.…”

mentioning

confidence: 99%

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

Yin

Tao

et al. 2007

SCI CHINA SER G

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Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the samples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.ZnO films, XRD spectra, PL spectra, substrate temperature, RF reactive sputtering ZnO has been widely used in the surface-acoustic apparatus, gas sensor, solar cell electrode and light emitters for its excellent optical and electronic properties [1] . As a kind of direct band semiconductor compound with hexagonal wurtzite structure, ZnO has a wide band gap E g (3.37 ev) and high excition binding energy ex b E (60 meV) at room temperature, compared with other wide band emission materials [2,3] such as ZnSe (E g = 2.7 eV, ex b E = 20 meV) and GaN (E g = 3.4 eV, ex b E = 21 meV), and it would be more suitable for the room temperature or high temperature ultra-violet emission material, so its emission properties have drawn much attention.The emission peaks of ZnO films mainly contain an excition peak (∼380 nm) [2][3][4][5][6][7] and a green peak (∼510 nm) [6,7] . With the further study of the ZnO films photoluminescent (PL) properties, blue peaks at various wavelengths have been reported, e.g. Wang et al. [8] reported the blue peak at 446

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Structural and luminescent properties of ZnO epitaxial film grown on Si(111) substrate by atmospheric-pressure MOCVD

Cited by 29 publications

References 22 publications

Characterization of ZnO films prepared by sol-gel method

Characterization of ZnO films prepared by sol-gel method

Multilayered ZnO Films of Improved Quality Deposited by Magnetron Sputtering

Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

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