Structural and Magnetic Properties of La2/3Sr1/3MnO3/SrTiO3/CoFe2 Hard-Soft Magnetic Systems

Moubah, R.; Colis, S.; Versini, G.; Barré, S.; Ulhaq‐Bouillet, C.; Dinia, A.

doi:10.1007/s10948-016-3901-8

Cited by 3 publications

(1 citation statement)

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“…Most of the limitations originate from their relatively large band gaps, and therefore, doping is systematically required to address different functions. Oxides can thus be used as transparent conductive materials (Sn-doped In 2 O 3 , ), magnetic semiconductors (transition metal doped ZnO , or TiO 2 ), half metallic materials for spintronic applications (La 2/3 Sr 1/3 MnO 3 , , Sr 2 FeMoO 6 , ), multiferroic materials (BiFeO 3 ), photon management materials (rare earth doped ZnO, , SnO 2 , , or CeO 2 ), etc. More recently, oxides were found to have a potential interest for photovoltaic solar cells. , The main issue related to these oxide materials is their high band gaps which, in order to fit the AM 1.5G solar spectrum, should be lowered to approach that of an ideal absorber in a single junction solar cell (around 1.1–1.3 eV) .…”

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confidence: 99%

Band-Gap Tuning in Ferroelectric Bi₂FeCrO₆Double Perovskite Thin Films

et al. 2018

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We report in this work on the variation of the optical bandgap and structural properties of epitaxial Bi 2 FeCrO 6 lms grown by pulsed laser deposition on SrTiO 3 (001) substrates. It is shown that the bandgap can be tuned by varying the laser repetition rate during deposition which has a strong impact on the Fe/Cr order inside the Bi 2 FeCrO 6 double perovskite structure. Ab initio band structure calculations unambiguously show that the presence of antisite defects lead to an increase of the gap with about 0.25 eV with respect to the one calculated in the ideal structure. It is also shown that with increasing Fe/Cr disorder the saturation magnetization is strongly reduced along with the dierence between the Fe and Cr valences. These results suggest that the bandgap of Bi 2 FeCrO 6 can eectively be engineered by modulating the deposition conditions, thus paving the way for applications such as photovoltaic conversion, memory writing and direct CMOS integration.

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