“…Heteroatom doping is one of the effective and simple techniques for structural and compositional modifications to tune the electronic and electrochemical properties of various 2D materials, 12–18 including MXenes. 4,19–23 Among the heteroatoms, nitrogen (N), 24 boron (B), 25 niobium (Nb), 26 tellurium (Te), 27 and vanadium (V) 28 are some popular dopants that have been doped in various MXenes for the improvement of their energy storage and generation performance, in recent times. For instance, N doped Ti 3 C 2 T x (N-Ti 3 C 2 ) 29 has been developed through solvothermal treatment, where ex situ nitrogen doping was carried out using urea in saturated ethyl alcohol as the N source to register high volumetric capacitance, while operating as a supercapacitor electrode in a potential window of 0.7 V. In another study, to demonstrate the practical application, crumpled N-Ti 3 C 2 nanosheets 24 were obtained via heating for the construction of printable electrochemical energy storage devices to operate in a potential window of 0.6 V in 3 M H 2 SO 4 , which generates an areal capacitance of 70.1 mF cm −2 at 10 mV s −1 .…”