Structural and Optical Annealing Route-Dependent Properties of CZTS Thin Films Grown by One-Step Electrodeposition with Free Annealing Sulfurization for Photovoltaic Application

Study of kesterite Cu2ZnSnS4 (CZTS) thin films deposited by spray technique for photovoltaic applications

“…According to these studies, the band-gap values were observed to increase with the substrate temperature, which was explained in terms of losing sulphur during the annealing procedure. However, the observation of the decreasing of the band gaps upon increasing the annealing temperature has been recorded for the CZTS thin films elaborated by a single-step electrodeposition method without the sulfurization process [18,19]. It was demonstrated that the increase in annealing temperature leads to a decrease in the phase impurity presence; and the morphology of the CZTS thin-film surface was improved.…”

“…In other words, to avoid the toxicity issue due to the presence of the selenium element, it would be preferable to use a pure sulphide compound, that is, CZTS [17]. Elaborating CZTS thin films with free annealing sulfurization onto indium-doped tin oxide-coated glass substrates for solar cell applications has been performed in the studies done by Azmi et al [18,19]. But, on the other hand, using a spray technique to fabricate CZTS thin films with free annealing sulphurization is also of great interest.…”

Growth of Cu2ZnSnS4 thin film absorber layer on transparent conductive oxides and molybdenum substrates by electrodeposition for photovoltaic application

“…However, the electrodeposition process is governed by several parameters that have to be optimized in order to obtain CZTS thin film with suitable properties. Based on our previously published works [2,13,23] related to the optimization of the electrodeposition synthesis route; the application of -1.1V vs SCE for 30 min was found to be the optimum deposition condition, and 450 °C was fixed as the best annealing temperature leading to a pure CZTS kesterite phase obtention.…”

“…The Cu 2 ZnSn(S,Se) 4 polycrystalline kesterite solar cell (CZTS) is a p-type semiconductor with an absorption coefficient around 10 -4 cm -1 and bandgap energy close to 1.6 eV [1]. Kesterite is essential for a wide range of solar cells technologies owing to the abundance of its components and its low production cost [2].…”

Role of triethanolamine in forming Cu 2 ZnSnS 4 nanoparticles during solvothermal processing for solar cell applications

“…Cu 2 ZnSnS 4 (CZTS) semiconductors have attracted considerable attention as promising active layers for photovoltaic cells due to the earth's abundance of the raw materials as well as its low toxicity, high absorption coefficient (>10 4 cm −1 ), optimal direct energy band of 1.4 to 1.6 eV, and thermodynamically stable kesterite structure 1–4 . Many non‐vacuum deposition methods can be used to synthesize CZTS including electrodeposition, 5 spray pyrolysis, 6 spin coating, 7 and solvothermal techniques 8 . Among these non‐vacuum methods, the solvothermal approach is one of the most suitable for synthesizing CZTS‐based photovoltage devices owing to their low price and high control of the growth conditions, ability to coat large areas, low energy consumption, low pollution, and low‐temperature processing 8,9 .…”