Structural and optical characteristic features of RF sputtered CdS/ZnO thin films*

Al-Baradi, Ateyyah M.; Altowairqi, Fatimah A; Atta, A.A.; Badawi, Ali; Algarni, Saud A.; Almalki, Abdulraheem S. A.; Hassanien, A.M.; Alodhayb, Abdullah; Kamal, A. M.; El-Nahass, M.M.

doi:10.1088/1674-1056/ab90e6

Cited by 25 publications

(3 citation statements)

References 50 publications

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“…5 (b) shows the average thickness of the thin lm (116 nm). The surface morphology results in this work are consistent with the previous studies [29,30]. Figure 6 shows the FESEM images of the AlGaN thin lms synthesized on samples 1 and 2 with their cross-section.…”

Section: Surface Morphologysupporting

confidence: 90%

Preparation and Simulation of AlGaN/CdS/Si Double Heterojunction for Solar Cell Application

Salih,

Ramizy,

Afzal

2024

Preprint

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This study presents a simple pulsed laser deposition technique (PLD) for the preparation of aluminium gallium nitride (AlGaN) thin film on CdS/Si substrate for solar cell application. A CdS layer was deposited on Si using thermal evaporator system and then AlGaN was grown on CdS/Si using the PLD technique using AlN and GaN targets. The effect of varying the number of laser pulses (300 and 600) and GaN/AlN ratio on structural, optical and morphological properties of the AlGaN thin film was investigated. Structural characterizations by x-ray diffraction revealed (0002) plane of AlGaN along with the diffraction peaks of GaN and AlN. The crystallite size of the AlGaN was decreased by increasing the GaN/AlN ratio. Photoluminescence (PL) spectra revealed that the energy band gap of AlGaN was slightly varied between 3.6 eV and 3.7 eV due to change of the GaN/AlN ratio. Surface roughness of the AlGaN was increased on increasing then laser pulses from 300 to 600 at lower GaN/AlN ratio, while it showed opposite trend in the case in which relatively higher ratio was used. Field-emission scanning electron microscopy showed semi-spherical grains of the films whose size was changed by changing the number of laser pulses and also the GaN/AlN ratio. The results of solar cell efficiency indicated a low efficiency (0.27%) of CdS/Si based solar cell which was significantly improved due to the growth of AlGaN on CdS/Si. solar cells based on AlGaN/CdS/Si prepared under various were found to be 2.50%, 2.83%, 2.23% and 2.81%. The solar cell efficiency obtained from the simulation study (2.68%, 2.50%, 3.29% and 3.25%) was in good agreement with the experimental results.

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Section: Surface Morphologysupporting

confidence: 90%

Preparation and Simulation of AlGaN/CdS/Si Double Heterojunction for Solar Cell Application

Salih,

Ramizy,

Afzal

2024

Preprint

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“…Furthermore, the optical band gap (E g ) of the prepared CdS NPs was visually assessed via Tauc’s law, (αhυ) n = A(hυ − E g ), where α, A, n, and hυ are the absorbance, the directly proportional constant, type of transition (2 for transition with direct property), and the value of energy band gap, respectively [ 19 , 20 ], which show 3.2 eV in its direct transition energy band gap. Thus, from Figure 2 b, the CdS/Si electrode, surface defects on the electrode-electrolyte interface may capture photoelectrons because of defect energy levels that exist above the conduction band of CdS, leading to carrier recombination at the electrode–electrolyte junction and increased hydrogen generation performance when lighted [ 21 , 22 ]. Furthermore, from Figure 2 d, the extinction coefficient (k) and refractive index (n), which are important for optoelectronic applications, were also computed using the following formula:

where α is the absorption coefficient, λ and R represent wavelength and optical reflectance, respectively.…”

Section: Resultsmentioning

confidence: 99%

Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application

Alkallas,

Alghamdi,

Al-Ahmadi

et al. 2023

Micromachines

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The high-quality n-type CdS on a p-type Si (111) photodetector device was prepared for the first time by a one-pot method based on an ns laser ablation method in a liquid medium. Cadmium target was ablated in DMSO solution, containing sulfur precursor, and stirred, assisting in 1D-growth, to create the sulfide structure as CdS nano-ropes form, followed by depositing on the Si-substrate by spin coating. The morphological, structural, and optical characteristics of the CdS structure were examined using X-ray diffraction, transmission, and scanning electron microscopy, photoluminescence, and UV-VIS spectroscopy. From X-ray diffraction analysis, the growing CdS spheres have a good crystal nature, with a high purity and desired c-axis orientation along the (002) plane, and the crystallinity was around 30 nm. According to optical characterization, high transparency was found in the visible–near-infrared areas of the electromagnetic spectrum, and the CdS spheres have a direct optical energy band gap of 3.2 eV. After that, the CdS/Si hetero-structured device was found to be improved remarkably after adding CdS. It showed that the forward current is constantly linear, while the dark current is around 4.5 µA. Up to a bias voltage of 4 V, there was no breakdown, and the reverse current of the heterojunctions somewhat increased with reverse bias voltage, while the photocurrent reached up to 580 and 690 µA for using 15 and 30 W/cm2 light power, respectively. Additionally, the ideal factors for CdS/Si heterojunction were 3.1 and 3.3 for 15 and 30 W/cm2 light power, respectively. These results exhibited high performance compared to the same heterojunction produced by other techniques. In addition, this opens the route for obtaining more enhancements of these values based on the changing use of sulfide structures in the heterojunction formation.

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“…O CdS sem calcinação apresenta picos característicos do estiramento da ligação Cd-S em 650, 1.020 e 1.050 cm -1 , além das bandas características da água (KIANI et al, 2020;SABAH et al, 2010;SUSHA et al, 2018). Com a calcinação a 400°C, a amostra apresenta picos também relacionados à ligação Cd-S em 590, 720, 960, 1.050 e 1.109 cm -1 (AL- BARADI et al, 2020;GE et al, 2012;ZHOU et al, 2021), além das bandas típicas da água.…”

Section: Espectroscopia No Infravermelhounclassified

Degradação Fotocatalítica De 4-Clorofenol Sob Luz Solar E Visível Utilizando O Compósito CdS/ZnO/Xerogel De Carbono Como Catalisador

Dantas¹

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Esse trabalho visou o desenvolvimento de fotocatalisadores de alta eficiência, com capacidade de absorção de luz visível, para degradação de poluentes orgânicos. Os fotocatalisadores foram sintetizados através do acoplamento de ZnO, CdS e uma matriz de xerogel de carbono de baixo custo, baseada em tanino de acácia negra. O ZnO é um dos fotocatalisadores mais amplamente utilizados, com boa eficiência, porém com a desvantagem de ter baixa absorção de luz visível, enquanto o CdS é um fotocatalisador sensível a luz visível que pode ser usado para sensibilizar o ZnO. O xerogel de carbono age como condutor, melhorando a separação de cargas, e age também como reserva de energia no sistema, além de possuir alta absorção no visível e alta porosidade, aumentando a quantidade de sítios ativos e, consequentemente, a atividade do fotocatalisador. Os fotocatalisadores produzidos foram caracterizados por difratometria de raios X, espectroscopia por reflectância difusa, espectroscopia Raman, espectroscopia no infravermelho, isotermas de adsorção-dessorção de N 2 , microscopia eletrônica de varredura e espectroscopia por excitação de fotoelétrons. A eficiência fotocatalítica dos materiais foi determinada sob irradiação visível e solar artificial através da degradação de 4-clorofenol, cuja concentração foi medida por espectroscopia UV-Vis. Todos os materiais ternários apresentaram as fases cristalinas hexagonais de ZnO e de CdS, assim como atividade fotocatalítica quando submetidos a irradiação solar e visível, sendo o material com maior eficiência o XZC 0.5 10% 600, promovendo 83% de degradação do 4clorofenol presente em solução após 300 minutos de irradiação solar. Esse mesmo material apresentou dois band gaps distintos, com energias de 3,20 eV e 2,77 eV.Palavras-chave: fotocatálise. óxido de zinco. sulfeto de cádmio. xerogel de carbono. poluentes orgânicos persistentes. 4-clorofenol.

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Structural and optical characteristic features of RF sputtered CdS/ZnO thin films*

Cited by 25 publications

References 50 publications

Preparation and Simulation of AlGaN/CdS/Si Double Heterojunction for Solar Cell Application

Preparation and Simulation of AlGaN/CdS/Si Double Heterojunction for Solar Cell Application

Photodetection Properties of CdS/Si Heterojunction Prepared by Pulsed Laser Ablation in DMSO Solution for Optoelectronic Application

Degradação Fotocatalítica De 4-Clorofenol Sob Luz Solar E Visível Utilizando O Compósito CdS/ZnO/Xerogel De Carbono Como Catalisador

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