2022
DOI: 10.1007/s10904-022-02312-1
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Structural and Optical Characteristic of Cu-Doped TiO2 Thin Film

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Cited by 8 publications
(5 citation statements)
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“…where A is a photonic energy independent constant; h is the Planck constant; υ is th frequency of the photon; α is the absorption coefficient; and n depends on the type o transition (n = 1/2 for indirect transition and n = 2 for direct transition) [33][34][35]. According to this, the Eg values of PP2 and PP8 were 3.02 and 2.91 eV, respectively, slightly lowe than the actual Eg of typical TiO2 NPs, 3.14-3.24 eV [36,37]. Figure 7 shows the Tauc plot meant for drawing optical band-gap energy (E g ) from UV-Vis spectra.…”
Section: Resultsmentioning
confidence: 99%
“…where A is a photonic energy independent constant; h is the Planck constant; υ is th frequency of the photon; α is the absorption coefficient; and n depends on the type o transition (n = 1/2 for indirect transition and n = 2 for direct transition) [33][34][35]. According to this, the Eg values of PP2 and PP8 were 3.02 and 2.91 eV, respectively, slightly lowe than the actual Eg of typical TiO2 NPs, 3.14-3.24 eV [36,37]. Figure 7 shows the Tauc plot meant for drawing optical band-gap energy (E g ) from UV-Vis spectra.…”
Section: Resultsmentioning
confidence: 99%
“…The lattice parameters of TiO2$\left(\text{TiO}\right)_{2}$ are a=b=7.604 Å$a = b = 7.604 \textrm{ } Å$ and c=9.715 Å$c = 9.715 \textrm{ } Å$, which are in good agreement with previous experimental results. [ 32 ] X‐Ray diffraction experiments have shown that Cu doping has little effect on the lattice constant of TiO2$\left(\text{TiO}\right)_{2}$, [ 33 ] so all calculations in this study ignored changes in the lattice constant. Furthermore, interstitial and oxygen sites are not suitable for occupation by Cu or other transition metals, [ 34 ] so we only considered Cu substituting for Ti (Ti(1x)CuxO2$\left(\text{Ti}\right)_{\text{(1} - x \left.\right)} \left(\text{Cu}\right)_{x} \left(\text{O}\right)_{2}$).…”
Section: Resultsmentioning
confidence: 99%
“…The DOS for all five configurations is displayed in Figure S12, Supporting Information, revealing a transition from a semiconductor to a metal or half-metal as the concentration of Cu ions increases. [33,34] Configurations B1 and B3 exhibit spin polarizations of 76.78% and 97.37%, respectively. As the distance between two Cu ions increases, the system undergoes a transition to a half-metal with 100% spin polarization.…”
Section: The Concentration and Site Of Cumentioning
confidence: 99%
“…They demonstrated decreased bandgap up to 10% of Cu doping and after that, a dual bandgap is observed owing to the formation of CuO. 18 The narrower bandgap of TiO 2 makes it suitable for solar cell devices. Khan et al used Mg-doped TiO 2 as an electron transporting and hole-blocking photoanode in dye-sensitized solar cells (DSSC) and observed the enhancement of the efficiency when the bandgap decreased with the film thickness.…”
Section: Introductionmentioning
confidence: 99%
“…14,15 It has been observed that Cu is a good choice as a dopant in TiO 2 . The Cu doped TiO 2 nanostructures are prepared using different methods including the solid-state reaction method, 16 electrostatic spray pyrolysis method, 14 hydrothermal method, 17 spray pyrolysis technique (A), 18 sol-gel method 19 and inert gas condensation technique. 20 In the above methods, the prepared TiO 2 nanostructures are in the mixed phase, both anatase and rutile phases.…”
Section: Introductionmentioning
confidence: 99%