Structural and optical characterization of nanometer sized MoS2/graphene heterostructures for potential use in optoelectronic devices

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

“…In the fields of materials science and semiconductor technology, Molecular Beam Epitaxy (MBE) is an approach used to create thin films of crystalline materials with exact monitoring of their structure and chemistry. [147][148][149][150][151] Owing to the ultra-high vacuum used in molecular beam epitaxy (MBE), there has recently been a lot of scientific interest in the production of large-area and high-quality epilayers of different TMDCs. [152][153][154][155] The fact that MBE offers several crucial competencies, including the ability to precisely regulate the composition, thickness, fundamental phases, and other features of TMDCs, makes it a perfect tool for investigating novel physics, looking into technological possibilities, and investigating basic sciences that may lead to intriguing purposes.…”

Recent Advances in Layered MX2-Based Materials (M = Mo, W and X = S, Se, Te) for Emerging Optoelectronic and Photo(electro)catalytic Applications

“…To face this problem, it is necessary to develop appropriate and efficient transfer methods from the grown substrate to the appropriate one for device application. Jadriško et al [266] presented the MoS 2 synthesis by using MBE on a graphene layer and a two-step electrochemical process to promote an efficient transfer of the MoS 2 /graphene heterostructure. Using this method, the transfer from an Ir (111) substrate to a Si wafer occurred with a high preservation of the heterostructure, which was ensured by high optical quality and low defects [266].…”

“…However, when applied in optoelectronic devices, some limitations are observed, such as low photoresponsivity owing to the zero-bandgap structure for the graphene, and low carrier mobility for MoS 2 [301]. On the other hand, the combination of these 2D materials to form thin 2D heterostructures has been reported as a strategy to tailor the band structure and improve the carrier mobility to be applied in high-performance optoelectronic devices [98][99][100]266,[302][303][304]. Kumar et al [305] demonstrated the successful hydrothermal growth of sulfur vacancy-induced WS 2 -rGO heterostructures.…”