Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

Longo, M.; Parisini, A.; Tarricone, Luciano; Vantaggio, Salvatore; Bocchi, C.; Germini, F.; Lazzarini, L.

doi:10.1016/j.jcrysgro.2009.07.015

Cited by 7 publications

(2 citation statements)

References 25 publications

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“…Such an estimated well width is only slightly larger than the nominal one (8 nm) and agrees, within the experimental uncertainty, with the results of a transmission electron microscopy investigation on similar samples. 27)…”

Section: Line-shape Analysismentioning

confidence: 99%

Anomalies in the Temperature Dependence of the Photoelectrical Response of GaAs/InGaP Superlattices

Parisini

Ghezzi²,

Tarricone³

et al. 2010

Jpn. J. Appl. Phys.

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Photoelectrical measurements were taken on InGaP (p+)-GaAs/InGaP-InGaP (n+) multilayers structures, formed by a sequence of nominally undoped InGaP/GaAs quantum wells, interposed between two p+ and n+ InGaP cladding layers. The heterostructures were grown through Low Pressure Metal Organic Vapour Phase Epitaxy, with liquid precursors for the III–V elements and growth conditions optimized for obtaining sharp interfaces and negligible ordering effects in InGaP. The experimental temperature dependence of the photoelectrical signal intensity exhibited peculiarities and anomalies which could lead to erroneous analysis of the perpendicular transport mechanisms, so that they are here critically discussed in the light of a partial depletion of the nominally intrinsic superlattice region of the p–i–n structure.

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Section: Line-shape Analysismentioning

confidence: 99%

Anomalies in the Temperature Dependence of the Photoelectrical Response of GaAs/InGaP Superlattices

Parisini

Ghezzi²,

Tarricone³

et al. 2010

Jpn. J. Appl. Phys.

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“…Lattice-matched In 0.485 Ga 0.515 P/GaAs hetero-structures are becoming major III-V semiconductor systems, because compared with AlGaAs/GaAs systems, they have lower reactivity with oxygen, higher number of reduced DX centers [1], and lower interfacial recombination rates [2]. InGaP/GaAs hetero-structures are thus attractive alternatives to AlGaAs/GaAs systems for applications in hetero-structure field-effect transistors (HFETs) [3,4], hetero-junction bipolar transistors (HBTs) [5,6], high power lasers [7][8][9], and solar energy conversion devices [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Nakano

Shioda

Enomoto

et al. 2012

Journal of Crystal Growth

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Photovoltaics literature survey (No. 74)

Shalav

Shrestha

2009

Progress in Photovoltaics

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In order to help keep readers up‐to‐date in the field each issue of Progress in Photovoltaics will contain a list of recently published journal articles most relevant to its aims and scope. This list is drawn from an extremely wide range of journals, including IEEE Transactions on Electron Devices, Journal of Applied Physics, Applied Physics Letters, Progress in Photovoltaics and Solar Energy Materials and Solar Cells. To assist the reader, the list is separated into broad categories, but please note that these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. If you have any suggestions please email Santosh Shrestha at s.shrestha@unsw.edu.au.

show abstract

Structural and optical characterization of MOVPE grown InGaP/GaAs MQWs for advanced photovoltaic devices

Cited by 7 publications

References 25 publications

Anomalies in the Temperature Dependence of the Photoelectrical Response of GaAs/InGaP Superlattices

Anomalies in the Temperature Dependence of the Photoelectrical Response of GaAs/InGaP Superlattices

Precise structure control of GaAs/InGaP hetero-interfaces using metal organic vapor phase epitaxy and its abruptness analyzed by STEM

Photovoltaics literature survey (No. 74)

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