Structural and optical investigations of GaN-Si interface for a heterojunction solar cell

Williams, J.R.; Jeffries, April; Ding, Laura; Gangam, Srikanth; Ghosh, Kunal; Williamson, Todd L.; Bertoni, Mariana I.; Honsberg, Christiana B.

doi:10.1109/pvsc.2014.6925046

Cited by 4 publications

(2 citation statements)

References 2 publications

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“…Nevertheless, this remains an attractive material, and low‐deposition‐temperature approaches are being trialled 363 . GaN shows similar attractiveness, or even higher due to its wider bandgap, yet also faces similar implementation challenges 367–369 . There are even fewer reports about this approach, in spite of the prospect of epitaxial GaN growth on (111) Si, which is attractive when using textured Si.…”

Section: Other Metal Compoundsmentioning

confidence: 99%

Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

Michel

Dréon

Boccard

et al. 2022

Progress in Photovoltaics

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Solar cells rely on the efficient generation of electrons and holes and the subsequent collection of these photoexcited charge carriers at spatially separated electrodes.High wafer quality is now commonplace for crystalline silicon (c-Si) based solar cells, meaning that the cell's efficiency potential is largely dictated by the effectiveness of its carrier-selective contacts. The majority of contacts currently employed in industrial production are based on highly doped-silicon, which can introduce negative side-effects including Auger recombination or parasitic absorption depending on whether the dopants are diffused into the absorber or whether they are incorporated into silicon layers deposited outside the absorber. Given the terawatt scale of deployment of c-Si solar cells, the search for alternative contacting schemes that can offer potential benefits in terms of performance, cost, ease of processing or stability is highly relevant. One such category of contacting schemes, with the potential to avoid the above mentioned issues, is that which employs metal compounds as the 'carrierselective' layer. The last 7 years has seen a surge in interest on this topic and a few promising families of materials have emerged, most prominently the alkali/alkalineearth metal compounds and the transition-metal oxides. The number of successful selective-contact demonstrations of materials within these families is fast increasing with the best solar cell demonstrations now exceeding 23%. However, in addition to improving their efficiency performance, several challenges remain if such contacts are to be considered for industrial adoption. These are mainly associated with poor stability, lack of compatibility with transparent electrodes and inability to be deposited using standard industrial techniques. This review covers the historical developments, current status and future prospects of metal-compound based selective contacts in the context of c-Si photovoltaics.

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Section: Other Metal Compoundsmentioning

confidence: 99%

Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

Michel

Dréon

Boccard

et al. 2022

Progress in Photovoltaics

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show abstract

“…[5]), indicating that GaN alone does not provide sufficiently good surface passivation More details on the growth and properties of GaN grown by ENABLE at low temperature are given in ref. [6]. Characterization of the GaN layers, as well as of other CSC candidates is ongoing, focusing on the measurement of absorption coefficient, doping level, band alignment and band offsets at the interface with Si, by measuring band edge levels, work function, bandgap, interface defect density.…”

Section: Figmentioning

confidence: 99%

“Thin silicon solar cells: A path to 35% shockley-queisser limits”, a DOE funded FPACE II project

Ding

Boccard

Williams

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

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Optimization of Indium Gallium Nitride quantum dots for absorbing light from solar spectra

Sultana

Alam

2015

2015 2nd International Conference on Electrical Information and Communication Technologies (EICT)

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Structural and optical investigations of GaN-Si interface for a heterojunction solar cell

Cited by 4 publications

References 2 publications

Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

“Thin silicon solar cells: A path to 35% shockley-queisser limits”, a DOE funded FPACE II project

Optimization of Indium Gallium Nitride quantum dots for absorbing light from solar spectra

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Structural and optical investigations of GaN-Si interface for a heterojunction solar cell

Cited by 4 publications

References 2 publications

Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

Carrier‐selective contacts using metal compounds for crystalline silicon solar cells

&#x201C;Thin silicon solar cells: A path to 35% shockley-queisser limits&#x201D;, a DOE funded FPACE II project

Optimization of Indium Gallium Nitride quantum dots for absorbing light from solar spectra

Contact Info

Product

Resources

About

“Thin silicon solar cells: A path to 35% shockley-queisser limits”, a DOE funded FPACE II project