The tuneable band gap property of Cadmium-sulphur-selenide (CdS 1-x Se x ) thin film makes it an appropriate material for a wide range of optoelectronic applications and this has aroused a lot of interest. In this paper, we report the study of Cadmium-sulphur-selenide (CdS 1-x Se x ) thin films, successfully grown on commercial glass slide substrate by the chemical bath deposition technique. The effect of selenium content (x value) on the structural, and some optical properties have been studied. The bath solution contained cadmium acetate dehydrate [Cd(CH 3 COO) 2 ·2H 2 O], sodium selenosulphate [Na 2 SeSO 3 ] and thiourea [CS(NH 2 ) 2 ] were used as the sources of Cd 2+ , Se 2− and S 2+ , respectively. Tartaric acid (C 4 H 6 O 6 ) was used as a complexing agent. The pH of the solution was adjusted to 12 by drop-wise addition of ammonia. The bath temperature was kept at 90˚C for a deposition time of 1 hour. Post deposition annealing processes of the thin films were performed in a furnace at a temperature of 400˚C for two hours. Both as-deposited and annealed films were characterised by Powder X-Ray Diffraction, Scanning Electron Microscopy, UV-Visible Optical Absorption Spectroscopy and Energy Dispersive X-Ray Analysis. Optical absorption data analysis indicates that direct allowed transitions occur in the films. The band gap of the as-deposited CdS 1-x Se x decreased linearly from 2.34 eV to 1.48 eV, with increasing selenium content, and in the annealed samples, decreased from 1.84 eV to 1.36 eV. X-ray diffraction measurements revealed, that pure CdS, and CdSe had mixed hexagonal and cubic phases. All the remaining ternary compounds were composed of cubic CdS and hexagonal CdSe phases. The annealed samples showed well defined and more intense peaks, suggesting an improvement in crystallinity. The average grain size increased slightly with increasing selenium content. SEM micrographs showed that the films were compact with a smooth texture and good coverage across the entire area of the substrate.