Structural and Optical Properties of ZnS Thin Films by SILAR Technique obtained by acetate Precursor

Ashith, V.K.; Rao, Gowrish K.

doi:10.1088/1757-899x/360/1/012058

Cited by 15 publications

(8 citation statements)

References 16 publications

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“…This process will be carried out by measuring the intensity of light [44] that passes through thin film with respect to the intensity of light via reference sample (glass slide). Figure 3 Based on the literature review, many researchers [45][46][47][48][49][50][51] have been used SILAR deposition method to produce various types of thin films. The obtained experimental results confirmed that the unique properties of thin films strongly depended on the experimental conditions including pH, deposition times, deposition temperature, the number of immersion cycles, the presence of complexing agent and the nature of substrate.…”

Section: Resultsmentioning

confidence: 99%

Properties Study of SILAR Deposited Cobalt Selenide Thin Films

Soonmin

2021

Int J Res Rev

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Thin films are attractive materials to be used in laser, solar cells, sensors, phosphors, light emitting diodes, IR windows and flat panel displays. Several deposition methods have been employed to deposit thin films as reported by many researchers. In this report, the cobalt selenide thin films have been deposited onto microscope glass slide via successive ionic layer adsorption and reaction method. This deposition method is a simple method owing to the inexpensive technique and can produce films at a low bath temperature. All the samples were investigated by using XRD, FESEM and UV-visible spectrophotometer. The XRD pattern confirmed that cubic phase cobalt selenide thin films. The FESEM image exhibited that the obtained sample is dense, uniform, and smooth surface. Keywords: XRD, FESEM, Thin films, Cobalt selenide, SILAR technique, Semiconductor, Band gap.

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Section: Resultsmentioning

confidence: 99%

Properties Study of SILAR Deposited Cobalt Selenide Thin Films

Soonmin

2021

Int J Res Rev

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“…Zinc acetate or acetic acid, zinc(II) salt (Zn(CH 3 CO 2 ) 2 ), and sodium sulfide solution were used to produce ZnS films onto the glass substrate [38]; the growth mechanisms are explained in Equations ( 6)- (9).…”

Section: Zinc Sulfide Filmsmentioning

confidence: 99%

“…The Sb 2 Se 3 thin films were deposited on glass substrates by using antimony potassium tartrate (K 2 Sb 2 (C 4 H 2 O 6 ) 2 ), tartaric acid (complexing agent), and sodium selenosulfate [121] under immersion cycles (350 times). The reaction mechanisms are reported in Equations ( 35)- (38).…”

Section: Antimony Selenide Filmsmentioning

confidence: 99%

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

Soonmin

2022

Applied Sciences

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Many researchers have reported on the preparation and characterization of thin films. The prepared thin films could be used in lasers, cathodic ray tubes, solar cells, infrared windows, ultraviolet light emitting diodes, sensors, supercapacitors, biologic applications, and optoelectronic applications. The properties of these thin films strongly depend on the deposition techniques. Throughout the years, many investigations into the production of various types of thin films (by using the successive ionic layer adsorption and reaction (SILAR) method) were conducted. This method attracts interest as it possesses many advantages when compared to other deposition methods. For example, large area depositions could be carried out in any substrates at lower temperatures via inexpensive instruments; moreover, a vacuum chamber is not required, it has an excellent growth rate, and the unique film properties could be controlled. In this work, metal sulfide, metal selenide, metal oxide, and metal telluride were deposited on substrates by using the SILAR method. According to the findings, both thick and thin films could be synthesized under specific conditions during the experiment. Additionally, the results showed that the number of deposition cycles, rinsing times, immersion times, and concentrations of the precursors affected the crystallinities, grain sizes, film thicknesses, surface roughness, and shapes of the obtained films. These films could be used in solar cell applications with high power conversion efficiency due to the appropriate band gap value and high absorption coefficient value.

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“…In the meantime, ternary chalcogenide cadmium zinc sulfides (Cd x Zn 1Àx S) have been developed due to their unique electrical and optical properties resulting from the adjustable bandgap between ZnS and CdS materials by changing the alloy composition. 19,20 ZnS, as a group II-VI semiconductor, has superior electrical conductivity as well as a wide bandgap energy (E g = 3.50-3.98 eV), which enables it to be employed as a light-stimulated substance. 21 On the other hand, CdS photo-corrosion gives rise to the restriction of its applications under irradiation.…”

Section: Introductionmentioning

confidence: 99%

A Cd_xZn_1−xS/TiO₂ nanotube array electrode for a highly sensitive and selective nonenzymatic photoelectrochemical glucose sensor

2022

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Structural and Optical Properties of ZnS Thin Films by SILAR Technique obtained by acetate Precursor

Cited by 15 publications

References 16 publications

Properties Study of SILAR Deposited Cobalt Selenide Thin Films

Properties Study of SILAR Deposited Cobalt Selenide Thin Films

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

A Cd_xZn_1−xS/TiO₂ nanotube array electrode for a highly sensitive and selective nonenzymatic photoelectrochemical glucose sensor

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Structural and Optical Properties of ZnS Thin Films by SILAR Technique obtained by acetate Precursor

Cited by 15 publications

References 16 publications

Properties Study of SILAR Deposited Cobalt Selenide Thin Films

Properties Study of SILAR Deposited Cobalt Selenide Thin Films

Recent Advances in the Growth and Characterizations of SILAR-Deposited Thin Films

A CdxZn1−xS/TiO2 nanotube array electrode for a highly sensitive and selective nonenzymatic photoelectrochemical glucose sensor

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A Cd_xZn_1−xS/TiO₂ nanotube array electrode for a highly sensitive and selective nonenzymatic photoelectrochemical glucose sensor