Structural and optical properties of Yb-doped ZnO films deposited by magnetron reactive sputtering for photon conversion

Balestrieri, Matteo; Ferblantier, G.; Colis, S.; Schmerber, G.; Ulhaq‐Bouillet, C.; Müller, D.; Slaoui, A.; Dinia, A.

doi:10.1016/j.solmat.2013.06.032

Cited by 67 publications

(46 citation statements)

References 37 publications

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“…However, the fact that the [O]/[Yb] ratio is less than six (shown in Table 1), as is the case for the pristine Yb(fod) 3 powder, suggests that some Yb ions may have undergone a shift in their electronic structure (the 2 F 5/2 and/or 2 F 7/2 energy levels) or may be optically inactive. A shift in the electronic structure would be supported by the larger width of the observed PL signal as compared to the reported widths from Yb doped ceramic [11,14,18,30], oxide [21,22,24,25] based host films, and Yb 2 O 3 crystalline films [33]. This wider luminescence spectra were also observed in Yb doped AlN films, where the host AlN films are essentially amorphous in form with AlN nanocrystals embedded in the matrix [54].…”

Section: Resultsmentioning

confidence: 86%

“…Incorporation of Yb into ceramic-based (YAG [11,12,13], Y 2 SiO 5 (YSO) [14,15,16], KY(WO 4 ) 2 [17], NaLu(WO 4 ) 2 [18], and Al 2 O 3 [19,20]) wide bandgap semiconductors, oxide-based semiconductors (ZnO [21,22,23], TiO 2 [24,25], In 2 O 3 [26]), III–V group based materials (AlN [27]), and Si-based [28] thin film hosts using various deposition techniques, have been shown to produce luminescence at a wavelength of around 1 μm. For Yb doped YAG [11], YSO [14,15], and KY(WO 4 ) 2 [17] thin films, the liquid phase epitaxial (LPE) method has been employed to fabricate homogeneous crystalline films from a molten solute diluted in a solvent.…”

Section: Introductionmentioning

confidence: 99%

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Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

et al. 2014

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Abstract:In situ Yb-doped amorphous carbon thin films were grown on Si substrates at low temperatures (<200 °C) by a simple one-step RF-PEMOCVD system as a potential photonic material for direct integration with Si CMOS back end-of-line processing. Room temperature photoluminescence around 1 µm was observed via direct incorporation of optically active Yb 3+ ions from the selected Yb(fod) 3 metal-organic compound. The partially fluorinated Yb(fod) 3 compound assists the suppression of photoluminescence quenching by substitution of C-H with C-F bonds. A four-fold enhancement of Yb photoluminescence was demonstrated via deuteration of the a-C host. The substrate temperature greatly influences the relative deposition rate of the plasma dissociated metal-organic species, and hence the concentration of the various elements. Yb and F incorporation are promoted at lower substrate temperatures, and suppressed at higher substrate temperatures. O concentration is slightly elevated at higher substrate temperatures. OPEN ACCESSMaterials 2014, 7 5644Photoluminescence was limited by the concentration of Yb within the film, the concentration of Yb ions in the +3 state, and the relative amount of quenching due to the various de-excitation pathways associated with the vibrational modes of the host a-C network. The observed wide full-width-at-half-maximum photoluminescence signal is a result of the variety of local bonding environments due to the a-C matrix, and the bonding of the Yb 3+ ions to O and/or F ions as observed in the X-ray photoelectron spectroscopy analyses.

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Section: Resultsmentioning

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

et al. 2014

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“…44,45 When an oxygen vacancy is formed, in order to balance the charge two neighboring Ce ions are reduced to 3+. 48,49 Doping with Pr does not lead to new emission lines. Fig.…”

Section: View Article Onlinementioning

confidence: 99%

Photoluminescence properties of rare earth (Nd, Yb, Sm, Pr)-doped CeO₂pellets prepared by solid-state reaction

et al. 2015

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Several structural and optical properties of ceria (band gap, refractive index and lattice parameter) make this material very promising for applications in optoelectronics and photovoltaics. In this paper, we show that CeO 2 can be efficiently functionalized by doping with trivalent rare earth ions to give rise to photon management properties. The trivalent ions can be successfully inserted by solid-state reaction of the elementary oxide powders. By combining the information obtained from the absorbance spectra with that of the PL excitation spectra, we demonstrate the presence of the trivalent ions in CeO 2 and provide insight in the electronic level structure and transfer mechanism. In particular, we prove that both the complex absorption spectra and the energy transfer mechanisms cannot be fully explained without considering the presence of isolated Ce 3+ ions in CeO 2 . Fig. 6 Schematic of the possible energy transfer mechanisms in RE-doped CeO 2 . The position of the energy levels of trivalent RE ions has been taken from ref. 54 and is relative to LaCl 3 as a host. The dashed arrows and the oblique lines represent the transfer mechanisms. The plain arrows correspond to some observed radiative transitions.

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“…There are only a limited number of papers on ZnO films doped with Yb. The ZnO:Yb material has been obtained by different methods such as reactive magnetron sputtering, metal‐organic chemical vapor deposition, or thermal decomposition of Yb‐doped zinc carbonate hydroxide . In all these cases Yb ions were introduced into the ZnO matrix during the growth process.…”

Section: Introductionmentioning

confidence: 99%

Ion Beam Modification of ZnO Epilayers: Sequential Processing

Turos

Ratajczak

Mieszczynski

et al. 2018

Physica Status Solidi (a)

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Defect agglomeration in ion‐implanted compound semiconductors produces lattice stress eventually causing plastic deformation at sufficiently high fluence. Consequently, a dislocations tangle is formed which can hardly be completely removed by thermal annealing. To solve this problem, a new method of sequential processing has been developed consisting of low fluence ion implantation followed by subsequent annealing. The procedure can be then repeated until the required impurity concentration has been reached without producing excessive damage. Epitaxial ZnO layers are grown using the atomic layer deposition (ALD) technique. Structural changes in ZnO epilayers due to Yb‐ion implantation and subsequent annealing are analyzed by Rutherford backscattering/channeling (RBS/c) and photoluminescence (PL). Correlation between defect transformations and PL efficiency is determined. Increased Yb‐atom optical activation upon sequential processing as compared to the standard single‐step annealing is observed.

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Structural and optical properties of Yb-doped ZnO films deposited by magnetron reactive sputtering for photon conversion

Cited by 67 publications

References 37 publications

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Photoluminescence properties of rare earth (Nd, Yb, Sm, Pr)-doped CeO₂pellets prepared by solid-state reaction

Ion Beam Modification of ZnO Epilayers: Sequential Processing

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Structural and optical properties of Yb-doped ZnO films deposited by magnetron reactive sputtering for photon conversion

Cited by 67 publications

References 37 publications

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Reduction of Photoluminescence Quenching by Deuteration of Ytterbium-Doped Amorphous Carbon-Based Photonic Materials

Photoluminescence properties of rare earth (Nd, Yb, Sm, Pr)-doped CeO2pellets prepared by solid-state reaction

Ion Beam Modification of ZnO Epilayers: Sequential Processing

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Photoluminescence properties of rare earth (Nd, Yb, Sm, Pr)-doped CeO₂pellets prepared by solid-state reaction