Structural and optical properties of ZnO thin films prepared by laser ablation using target of ZnO powder mixture with glue

Martín-Tovar, E A; Castro-Rodrı́guez, R.; Daza, L.G.; Mendez-Gamboa, J. A.; Medina-Esquivel, R. A.; Perez-Quintana, I.; Iribarren, A.

doi:10.1007/s12034-017-1384-2

Cited by 7 publications

(5 citation statements)

References 21 publications

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“…The peak positions and orientations match well with the JCPDS card no. 01‐080‐0075 that suggest polycrystalline nature of these compounds . As compared to the pristine ZnO, the diffraction from the (002) peak gets weaker, which indicates a decrease in growth rate and confinement of crystallization .…”

Section: Resultsmentioning

confidence: 98%

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Effect of dilute concentrations of Sm on the temperature‐dependent electrical and dielectric properties of ZnO

Arora

Kumar²,

Kaur

et al. 2018

J Am Ceram Soc

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Compounds of undoped and samarium (Sm) doped ZnO have been prepared by standard solid‐state reaction method. X‐ray diffraction (XRD), Williamson‐Hall (W‐H) analysis, Transmission Electron Microscopy (TEM), temperature‐dependent electrical and dielectric studies have been done to characterize these materials. Inclusion of Sm as dopant in hexagonal wurtzite ZnO changes the lattice parameters to a small extent with some Sm aggregation at higher concentration. Also, the mean particle sizes of ZnO:Sm compounds showed an inter‐correlation with the Scherrer method, W‐H analysis as well as with TEM results. The electrical resistivity depicts an exponential decay and metal‐semiconductor transition (MST) at ~300 K for the pristine sample whereas there is large decrement in the resistivity with Sm doping. The analysis of σac of ZnO suggests that the power law is obeyed and indicated an increase in the ac conductivity with Sm content. The mechanism behind this type of conductivity is elucidated by small polaron tunneling (SPT) model of conductivity. The dependence of ln dc on the temperature inverse shows that the traps of electrons are thermally activated such that low and high temperature activation energies confirm the presence of vacancies and interstitials of both O and Zn ions. Thus, a high value of dielectric constant makes these materials suitable for high frequency and charge storage device applications.

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Section: Resultsmentioning

confidence: 98%

“…01-080-0075 that suggest polycrystalline nature of these compounds. 18,19 As compared to the pristine ZnO, the diffraction from the (002) peak gets weaker, which indicates a decrease in growth rate and confinement of crystallization. 20 The Sm ions are completely doped into the Zn lattice except for the x = 0.02 and x = 0.03.…”

Section: Introductionmentioning

confidence: 99%

Effect of dilute concentrations of Sm on the temperature‐dependent electrical and dielectric properties of ZnO

Arora

Kumar²,

Kaur

et al. 2018

J Am Ceram Soc

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“…The experimental samples for the commercial "O" surface polishing comprised zinc oxide single crystals with a surface normal direction of [0001] and an edge orientation of [11][12][13][14][15][16][17][18][19][20] (10 × 10 × 0.5 mm). The 350 MeV 56 Fe 21+ ion irradiation test was carried out at the Heavy Ions Research Facility in Lanzhou (HIRFL) at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…The research of related ZnO materials is mainly focused on voltage-dependent, gas sensing characteristics, the photocatalytic properties of nanomaterials [8,9], NiO/ZnO heterojunction ultraviolet detectors, and low dimensional ZnO heterojunction light emitting diodes, etc. [10][11][12]. There is relatively little research on the structural properties of ZnO materials in a strong radiation environment.…”

Section: Introductionmentioning

confidence: 99%

Raman Spectra and Microstructure of Zinc Oxide irradiated with Swift Heavy Ion

et al. 2019

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Zinc oxide (ZnO) materials irradiated with 350 MeV 56Fe21+ ions were studied by Raman spectroscopy, Photoluminescence spectra (PL) and Transmission electron microscope (TEM). After 56Fe21+ ion irradiation, a strong oxygen vacancy (Vo) related defect absorption peak at 576 cm−1 and an interstitial zinc (Zni) -related defect at 80 cm−1~200 cm−1 formed, and with the increase of dose, the absorption peak was obviously enhanced. Through theoretical calculation, different Raman incident light test methods wereused to determine the oxygen vacancy defect (Vo). There were no significant variation tendencies in the other Raman characteristic lines. Our results demonstrate an energy loss process contributing to the defect structure during irradiation. TEM images showed a lot of fundamental defects. But we see no distinct amorphization in the samples in the electron diffraction images, indicating that the higher energy and irradiation dose hardly affected the structure and performance of zinc oxide.

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“…In addition, when obtained as a mesoporous structure, it could have a possible industrial application for conjugated materials [9,10]. Several deposition techniques are used to grow ZnO films, such as thermal evaporation [11], spray pyrolysis [12], sputtering [13], laser ablation [14], and sol-gel [15] among others. In this work, we extracted the ZnO nanoparticles (NPs) from a commercial paste, in a colloidal form similar to that obtained through the conventional sol-gel chemical process.…”

Section: Introductionmentioning

confidence: 99%

Morphological, Structural, and Optical Bandgap Characterization of Extracted ZnO Nanoparticles from Commercial Paste

Nabil

Perez-Quintana

Acosta

et al. 2021

Advances in Materials Science and Engineering

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ZnO nanoparticles (NPs) were extracted from a commercial paste in both colloidal and precipitate forms. The Zetasizer analysis performed on the colloid showed ZnO NPs ranging from ∼30 nm to ∼100 nm. Thin films of ZnO were deposited on glass substrates by spin-coating technique from a mixture of the extracted colloid and precipitate. The scanning electron microscope (SEM) images showed uniformly arranged, mesoporous, and nanostructured ZnO particles of different shapes, with an estimated film thickness of 0.67 μm. Analysis by energy dispersive X-ray spectroscopy (EDS) and X-ray diffraction analysis (XRD) confirmed the presence of ZnO in the films, with no impurities or remnants of other materials. The XRD analysis showed a polycrystalline nature of the films and identified a pure phase formation of the hexagonal wurtzite structure. The average crystallite size calculated from the diffraction peaks is ∼43.25 nm. The calculated crystal tensile strain is 1.954 × 10−3, which increases the crystal volume by 0.728% compared with the crystal volume of standard ZnO. The calculated crystal parameters are a = b = 3.258 Å and c = 5.217 Å. The calculated dislocation density (d) and bond length Zn–O (L) are 5.35 × 10−4 nm−2 and 2.695 Å, respectively. Ultraviolet-visible absorption spectra showed an optical band gap of ∼3.80 eV.

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Structural and optical properties of ZnO thin films prepared by laser ablation using target of ZnO powder mixture with glue

Cited by 7 publications

References 21 publications

Effect of dilute concentrations of Sm on the temperature‐dependent electrical and dielectric properties of ZnO

Effect of dilute concentrations of Sm on the temperature‐dependent electrical and dielectric properties of ZnO

Raman Spectra and Microstructure of Zinc Oxide irradiated with Swift Heavy Ion

Morphological, Structural, and Optical Bandgap Characterization of Extracted ZnO Nanoparticles from Commercial Paste

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