Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrates

Zhang, Biao; Luan, Caìna; Wang, Di; Xiao, Hongdi; Feng, Xianjin; Le, Yong; Ma, Jin

doi:10.1016/j.ceramint.2021.10.225

Cited by 5 publications

(3 citation statements)

References 28 publications

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“…This suggests that the band gap of Zn 2 TiO 4 is modified to 4.40 eV (Figure 7). In some reports, the band is also mentioned to be 4.41 eV [18]. This value is in good agreement with our value.…”

Section: Discussionsupporting

confidence: 93%

“…However, this band disappears when the concentration of ZnO decreases, suggesting that the band gap can be modulated without affecting the crystallinity of the host matrix. In one of the articles by Zhang et al [18], it is mentioned that the band gap of Zn 2 TiO 4 with the highest crystal quality is 4.41 eV (282 nm). When we compare this observation with our results, where we also obtain a band gap maximum in the same wavelength region for sample A10, we infer that the band gap of Zn 2 TiO 4 could be ∼4.40 eV, and the band at 3.30 eV as reported in earlier findings could be a result of unreacted ZnO in the host lattice.…”

Section: Uv-vis Diffuse Reflectancementioning

confidence: 99%

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Band Gap Modulation in Zn2TiO4 Spinels for Efficient UV-A Persistent Luminescence

Sharma,

Chouhan,

Sharma

2024

Applied Sciences

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Spinels are important materials for an application in bioimaging. The key advantage with spinel-type hosts is the presence of antisite defects, which act as charge reservoirs for trapping electrons and holes at complementary defect sites. This makes them a host system similar to a molecular system. Herein, we present a systematic approach to modulating the band gap of an inverse Zn2TiO4 spinel. With a change in ZnO concentration, the absorption band at 375 nm diminishes and disappears at a ZnO:TiO2 concentration of 1.40:1.00. The band gap of the material is modified from 3.30 to 4.40 eV. The crystal structure of the sample does not change drastically as determined using X-ray diffraction and Rietveld refinement. The Zn2TiO4 emits in the UV-A region with a lifetime in the time domain of `ns’. The sample also shows persistent luminescence of at least 15 min upon excitation with 254 nm with prominent emission in the UV-A region (300–390 nm). The present results open a new avenue for the synthesis of spinel hosts where the band gap can be modified with ease. The UV emission thus observed is expected to find usage in interesting applications like photocatalysis, anti-counterfeiting, water disinfecting, etc.

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Section: Discussionsupporting

confidence: 93%

Section: Uv-vis Diffuse Reflectancementioning

confidence: 99%

Band Gap Modulation in Zn2TiO4 Spinels for Efficient UV-A Persistent Luminescence

Sharma,

Chouhan,

Sharma

2024

Applied Sciences

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“…Zinc titanate is a kind of white inorganic nonmetallic ceramic material, which has been widely used in chemical catalysis, [1] environmental treatment [2][3][4] and dielectric ceramics. [5][6][7][8] There are three compounds existed in the ceramic system of zinc titanate: Zn 2 Ti 3 O 8 with cubic defect spinel structure, ZnTiO 3 (zinc metatitanate) with hexagonal illuminate structure and Zn 2 TiO 4 (zinc orthotitanate) with cubic spinel crystal structure. [9][10][11][12] Zn 2 Ti 3 O 8 is a thermodynamically stable compound up to a temperature of 800 °C (or slightly less), above which it transforms sequentially into ZnTiO 3 .…”

Section: Introductionmentioning

confidence: 99%

Formation and Structural Characterization of Spinel‐Phase Zn₂TiO₄ Synthesized in a High‐Temperature Solution Approach

Zhang

Xue

et al. 2023

ChemistrySelect

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Spinel phase Zn 2 TiO 4 powders were prepared by high-temperature solution, which is a kind of molten salt (such as KCl melt). The effect of Zn 2 TiO 4 synthesis was explored under different holding time, preparation temperature and the mass ratio of salt to raw material in KCl melt. Through experimental analysis, the synthesis temperature range of Zn 2 TiO 4 phase in KCl molten salt system was from 800 to 1000 °C. Compared with the traditional solid-state reaction, the stable temperature range of Zn 2 TiO 4 phase in KCl molten salt system was wider. The HRTEM image analysis of calcined product was consistent with the XRD result. The TEM analysis showed that the average particle size of Zn 2 TiO 4 powder was 200 nm. The crystallinity of Zn 2 TiO 4 increased with increasing sintering time and Zn/Ti molar ratio. Compared with LiCl + KCl and LiCl melts, the crystallinity of Zn 2 TiO 4 powder synthesized in KCl molten salt system was better. It is determined that the high-temperature solution (KCl melt) can be successfully applied for large-scale synthesis of spinel phase Zn 2 TiO 4 .

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Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films

Wang

Zhang

Yang

et al. 2023

J Mater Sci: Mater Electron

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Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrates

Cited by 5 publications

References 28 publications

Band Gap Modulation in Zn2TiO4 Spinels for Efficient UV-A Persistent Luminescence

Band Gap Modulation in Zn2TiO4 Spinels for Efficient UV-A Persistent Luminescence

Formation and Structural Characterization of Spinel‐Phase Zn₂TiO₄ Synthesized in a High‐Temperature Solution Approach

Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films

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Structural and optical properties of single crystal Zn2TiO4 films prepared on MgO (110) substrates

Cited by 5 publications

References 28 publications

Band Gap Modulation in Zn2TiO4 Spinels for Efficient UV-A Persistent Luminescence

Band Gap Modulation in Zn2TiO4 Spinels for Efficient UV-A Persistent Luminescence

Formation and Structural Characterization of Spinel‐Phase Zn2TiO4 Synthesized in a High‐Temperature Solution Approach

Effect of annealing time on the microstructure, crystal quality and optoelectronic properties of Er-Ga2O3 films

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Formation and Structural Characterization of Spinel‐Phase Zn₂TiO₄ Synthesized in a High‐Temperature Solution Approach