STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO2N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

Atuchin, V.V.; Khasanov, T. Kh.; Kochubey, V. A.; Pokrovsky, L.D.; Гаврилова, Т. А.

doi:10.1142/s0217979209053813

Cited by 7 publications

(4 citation statements)

References 26 publications

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“…Furthermore, MoN emerged as a most promising material for their usage as a diffusion barrier for interconnector applications. [221][222][223][224][225]…”

Section: Monmentioning

confidence: 99%

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Bharani

Sharma

2022

Physica Status Solidi (a)

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Transition metal nitride (TMN) thin films exhibit outstanding physical, chemical, and mechanical properties, making them best suitable for a wide variety of applications. The most commonly used technique to produce metal nitride thin films with specific properties at optimum conditions is magnetron sputtering. Considering this, this review begins with advancements in the sputtering process from basic diode sputtering to the most commonly used pulsed magnetron sputtering. Further, the literature on several TMNs deposited via magnetron sputtering is summarized, referring to several articles that have been published during the last decades. The main emphasis lies on nitride-based thin films' structural, morphological, and mechanical aspects for various applications. In addition, the influence of reactive gas flow rate, substrate temperature, layer thickness, postannealing temperature, substrate bias voltage, protective layers, the sputtering technique adopted, etc. on the quality and performance of the thin films is also focused. The overall review work can be beneficial for the students and researchers in understanding the basic sputtering phenomenon with its advancements, the relationship between deposition parameters and surface properties, and to know the current research trend for exploring several research gaps in the literature.

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“…Furthermore, MoN emerged as a most promising material for their usage as a diffusion barrier for interconnector applications. [221][222][223][224][225]…”

Section: Monmentioning

confidence: 99%

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Bharani

Sharma

2022

Physica Status Solidi (a)

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“…Дисперсионные зависимости показателя преломления, n(λ), и коэффициента поглощения, k(λ), пленок хрома определялись с помощью спектрального эллипсометра «Спектроскан» [19][20][21]. Измерения спектральных зависимостей эллипсометрических углов Ψ и Δ проводились в диапазоне длин волн λ = 250-1100 нм.…”

Section: оптические свойства пленок хромаunclassified

Structure, microrelief and optical properties of chromium films deposited by sublimation in vacuum

Kochubey¹,

Atuchin²,

Pokrovsky³

et al. 2013

LoM

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Исследованы микроструктурные и оптические характеристики пленок хрома, нанесенных на подложки из плавленого кварца и кремния методом термического испарения хрома в вакууме. Приповерхностный слой пленок является аморфным. По данным атомной силовой микроскопии, параметр rms на поверхности пленки хрома на плавленом кварце составляет 0,7 нм. Методом спектральной элипсометрии определены дисперсионные зависимости показателя преломления, n(λ), и коэффициента поглощения, k(λ), в диапазоне длин волн λ = 250-1100 нм. Ключевые слова: термостатированный испаритель, пленки хрома, спектральная эллипсометрия.

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“…Molybdenum nitride (MoN x ) thin films have been applied as anodes of Ni batteries, catalysts, and diffusion barriers because MoN x thin films have outstanding properties for these applications, such as morphology, low resistivity, and hardness . Various methods for synthesizing MoN x thin film have been reported including hydrothermal method, cathodic arc evaporation method, chemical solution method, radio frequency (rf) sputtering, dc sputtering, and high‐temperature plasma . Previous studies have adapted sputtering methods to fabricate MoN x thin films because it can be applied in low‐temperature environment and for large‐area substrate.…”

Section: Introductionmentioning

confidence: 99%

Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

Jeong

Park

Choi

et al. 2015

Bulletin Korean Chem Soc

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Molybdenum nitride (MoN x ) thin films were deposited on p-type Si(1 0 0) wafer using reactive radio frequency magnetron sputtering at various nitrogen gas ratios in an ultra high vacuum (UHV) system. Two metallic phases, Mo(1 1 0) and Mo(2 1 1), were detected from the film obtained without nitrogen gas in the sputter gas. The thickness of the films measured with a surface profiler decreased from 186.0 to 21.5 nm with increasing nitrogen gas ratio in the sputter gas from 0 to 100%, respectively. From the X-ray photoelectron spectroscopy (XPS) analysis, Mo species were further oxidized by the addition of nitrogen gas in the sputter gas. As nitrogen gas was introduced, the portion of Mo 4+ species decreased while those of Mo 5+ and Mo 6+ species increased. As the nitrogen gas ratio in the sputter gas increased, the formation of MoN x thin films was confirmed by N 1s XPS spectra. The conductivity decreased from 927.7 to 97.1 S/cm with 0 and 100% of nitrogen gas ratio, respectively.Keywords: Mo nitride, Radio frequency magnetron sputtering, X-ray photoelectron spectroscopy, X-ray diffraction, Conductivity, Ultra high vacuum IntroductionMolybdenum nitride (MoN x ) thin films have been applied as anodes of Ni batteries, 1 catalysts, 2-4 and diffusion barriers [5][6][7][8][9][10][11][12][13][14] because MoN x thin films have outstanding properties for these applications, such as morphology, 3 low resistivity, 13 and hardness.14 Various methods for synthesizing MoN x thin film have been reported including hydrothermal method, 2 cathodic arc evaporation method, 10 chemical solution method, 11 radio frequency (rf ) sputtering, 13-16 dc sputtering, 5-9,17-19 and hightemperature plasma. 20 Previous studies have adapted sputtering methods to fabricate MoN x thin films because it can be applied in low-temperature environment and for large-area substrate. These advantages make sputtering a more efficient method for industry than others. Previously reported results of fabrication of MoN x films used sputtering methods. [5][6][7][8][9][13][14][15][16][17][18] Anitha et al. prepared MoN x thin film using rf magnetron sputtering with varying nitrogen gas ratio. The crystallization was determined as Mo 2 N with several phases. 13 With increasing nitrogen gas ratio from 0 to 89%, resistivity increased from 0.26 to 6.00 μΩm. Kumar et al. used reactive dc magnetron sputtering for deposition of MoN x films as nitrogen gas flow changed from 0 to 20 sccm. Deposition rate of MoN x thin films decreased as nitrogen flow rate increased.6 Crystallinity changed as nitrogen gas ratio increased from γ-Mo 2 N(1 1 1) through β-Mo 2 N(2 0 0), Mo 3 N 2 (1 1 1), Mo 16 N 7 (4 0 0), β-Mo 2 N(2 2 0), and Mo 5 N 6 (1 1 0), to Mo 16 N 7 (4 0 0). Resistivity of MoN x thin films increased from 3.0 × 10 −9 to 1.8 × 10 −6 Ωm as nitrogen ratio increased from 0 to 33%. MoN x thin film was thermally stable below 600 C. However, they did not give any information about composition of the surface and oxidation states of Mo. In this study, we report the results of...

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STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO₂N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

Cited by 7 publications

References 26 publications

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Structure, microrelief and optical properties of chromium films deposited by sublimation in vacuum

Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

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STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO2N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

Cited by 7 publications

References 26 publications

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Magnetron Sputtered Thin Films Based on Transition Metal Nitride: Structure and Properties

Structure, microrelief and optical properties of chromium films deposited by sublimation in vacuum

Surface Characteristics of MoNx Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System

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STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO₂N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING

Surface Characteristics of MoN_x Thin Films Obtained by Reactive rf Magnetron Sputtering in UHV System