STRUCTURAL AND OPTICAL PROPERTIES OF n-TYPE POROUS SILICON — EFFECT OF HF CONCENTRATION

Jeyakumaran, N.; Natarajan, B.; Ramamurthy, S.; Vasu, V.

doi:10.1142/s0218625x07009384

Cited by 6 publications

(9 citation statements)

References 26 publications

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“…Meanwhile, the PL intensity increased considerably for 3 min of anodization (with a local maximum at 3 min of anodization) and, thereafter, the nanocrystalline Si size decreased considerably. The increase of the PL intensity resulted from an increase in the number density of nanocrystalline Si [41]; however, the PL intensity decreased after 3 min of anodization, regardless of the generation of nanocrystalline Si at the openings of the nanopores. This result suggested that the depth of penetration of the excitation beam was limited.…”

Section: Optimization Of Preparation Conditions For N-type Psimentioning

confidence: 94%

Fabrication of ZnS/Porous Silicon Composite and Its Enhancement of Photoluminescence

Mizuhata

Mineyama

Maki

2016

Electrochimica Acta

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A ZnS thin film was electrodeposited on the surface of nanopores of porous silicon (PSi) without plugging of the nanopores. And the optical properties of the ZnS/PSi composites were investigated. The PSi was fabricated by anodization of n-Si (100) wafer in HF/EtOH/H 2 O solution under constant current conditions. The pore diameter and the porous layer depth of the PSi were 20-80 nm and 8-50 μm, respectively, and they are controlled by variation of the HF concentration and anodization time. Electrodeposition proceeded on the surface of the nanopores (pore diameter, 80 nm) of the PSi under galvanostatic conditions of 0.44-8.85 mA/cm 2 and the aqueous electrolyte solution contained ZnSO 4 , Na 2 S 2 O 3 and glycerol. The deposited ZnS plugged the nanopores at high current density, whereas at low current density, ZnS was deposited on the nanopore wall without plugging. The photoluminescence (PL) spectra due to the ZnS/PSi composites showed two separate peaks at 430 nm and 530 nm. The PL intensity decreased with increased current density because of the segregation of ZnS on the upper parts of the PSi nanopores. The PL intensity was also enhanced owing to the large surface area of the PSi.

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Section: Optimization Of Preparation Conditions For N-type Psimentioning

confidence: 94%

Fabrication of ZnS/Porous Silicon Composite and Its Enhancement of Photoluminescence

Mizuhata

Mineyama

Maki

2016

Electrochimica Acta

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“…Porous Silicon can exhibit a large variety of morphologies and particle size. It has been reported that the luminescence of the PS is ascribed to the quantum confinement effect (QCE) as well as to the presence of Si-Hn bond near the surface of nanocrystallites [4].…”

Section: Introductionmentioning

confidence: 99%

Chemical, Morphological and Electrical Properties of Porous Silicon Prepared by Photelectrochemical Etching

Mohamid¹,

Nayef²,

Kadem³

2013

JNUS

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In this work, the nanocrystalline porous silicon (PS) films is prepared by photoelectrochemical etching of n-type silicon wafer with different currents density (20, 35 and 50 mA/cm 2 ) and etching time 15 min on the formation nano-sized pore array with a dimension of around few hundreds nanometric. The films were characterized by the measurement of FTIR spectroscopy and atomic force microscopy properties.Chemical fictionalization during the photoelectrochemical etching show on surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3-Si-H) dispersed in amorphous silica matrix and (O-SiO, C-SiO). It is observed from the FTIR analyses that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak (Si-H) bonds. The atomic force microscopy investigation shows the rough silicon surface; with increasing etching process (current density) porous structure nucleates which leads to an increase in the width (diameter) of surface pits. Consequently, the surface roughness also increases. The electrical properties of prepared PS; namely current density-voltage characteristics under dark, show that the pass current through the PS layer decreased by increasing the current density and etching time, due to increase the resistivity of PS layer. The PS layer shows a rectifying behaviour with different rectification ratio. C-V measurements demonstrate that the behaviour of the resulting junction is more like to Schottky junction. This study makes it clear that the charge carries depletion process occur in PS layer. Moreover, the charge carries decrease and width of depletion layer increase by increasing the current density.

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“…The high concentration of PSNPs of Si-O-Si might be to blame for the increase in displaced free radicals. The findings revealed that the high content SiO stretching in (O-SiO), CH3 symmetric stretching, CO binding, CH2 symmetric stretching, and OH stretching (SiOH) are all responsible for antioxidant action [24,25,26,27,31]. Enzymatic antioxidants have a role in cellular defense against ROS [28], and they have been hypothesized to serve as antioxidants.…”

Section: Antioxidant Action Of Psnpsmentioning

confidence: 99%

Developing Strategy for a Successful Antioxidant, Anticancer Activity via an Improved Method Prepared to Porous Silicon Nanoparticles

Jawad¹,

Hasson²

2021

JASN

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Porous silicon nanoparticles, or PSNPs, are one of the most common NPS with distinct characteristics. PSNPs were created using an enhanced approach known as the electrochemical etching process. The nanoparticles were treated with a post-laser to obtain the nanoparticles, which were subsequently analyzed using (SEM), (UV-Vis), and (XRD). The size refers to porous silicon with a nanostructure. Because of the differences in interaction between the HF electrolyzed and silicon and crystal structure, PS (100) offers better NP properties than directional silicon (111). PSNPs' antioxidant activity was measured using the DPPH test, while cytotoxicity was measured using the MTT assay on Hella cells. PSNPs have an inhibitory impact on cancer cell growth and antioxidants, according to the findings. PSNPs did not have any toxicological effects on the skin, lungs, or spleen after injection.

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STRUCTURAL AND OPTICAL PROPERTIES OF n-TYPE POROUS SILICON — EFFECT OF HF CONCENTRATION

Cited by 6 publications

References 26 publications

Fabrication of ZnS/Porous Silicon Composite and Its Enhancement of Photoluminescence

Fabrication of ZnS/Porous Silicon Composite and Its Enhancement of Photoluminescence

Chemical, Morphological and Electrical Properties of Porous Silicon Prepared by Photelectrochemical Etching

Developing Strategy for a Successful Antioxidant, Anticancer Activity via an Improved Method Prepared to Porous Silicon Nanoparticles

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