Structural and optical properties of SbAl co-doped ZnO nanowires synthesized using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD) with Sb as catalyst

Palani, I. A.; Nakamura, Daisuke; Okazaki, Ken; Highasiata, M.; Okada, Tatsuo

doi:10.1016/j.jallcom.2012.02.177

Cited by 8 publications

(3 citation statements)

References 39 publications

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“…Many techniques have been employed to prepare the doped ZnO, including nanoparticle assisted pulsed laser deposition (NAPLD), [18] pulsed laser deposition (PLD), [19] molecular beam epitaxy (MBE), [15,20] magnetron sputtering, metalorganic chemical vapor deposition (MOCVD), [21] and thermal oxidation, [14] which are limited due to the complex and expensive process. Compared with these methods, the sol-gel method is a relatively simple technique and can precisely control the chemical composition of doped ZnO films under low cost and low processing temperature.…”

Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Cao¹,

Xiao-ru²,

Libing³

et al. 2014

Chinese Phys. B

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Sb-doped ZnO thin films with different values of Sb content (from 0 to 1.1 at.%) are deposited by the sol-gel dipcoating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy (UV-VIS) spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance (> 90%) in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence (PL) spectra revealed that the defect emission (around 450 nm) is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.

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Section: Introductionmentioning

confidence: 99%

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Cao¹,

Xiao-ru²,

Libing³

et al. 2014

Chinese Phys. B

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show abstract

“…The doping could create free electrons and enhance conductivity by one or two orders of magnitude. It is reported that the Ti dopant could increase the electrical conductivity of ZnO thin film [18], and the Ga dopant could improve the crystalline quality and increase carrier concentration [19]. Unfortunately, the optical properties and chemical durability of the ZnO films doped by only one element is not very satisfying.…”

Section: Introductionmentioning

confidence: 99%

“…Unfortunately, the optical properties and chemical durability of the ZnO films doped by only one element is not very satisfying. In order to further improve the chemical and physical properties of ZnO films, the co-doping with two elements such as AlGa [20,21], Sb-Al [19] and Ti-Al [18] was used. Up to now, however, many previous studies have mainly focused on the investigation of the synthesis and electrical properties of co-doped ZnO thin films.…”

Section: Introductionmentioning

confidence: 99%

Effect of working pressure on the structural, optical and electrical properties of titanium-gallium co-doped zinc oxide thin films

Zhang

Zhong

2013

Mater Sci-Pol

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The transparent conducting titanium-gallium co-doped zinc oxide (TGZO) thin films were grown on glass substrates by radio-frequency magnetron sputtering technique. The effects of working pressure on the structural, optical and electrical properties of the films were investigated. The results show that the deposited films are polycrystalline with a hexagonal wurtzite structure and highly textured along the c-axis perpendicular to the substrate. The TGZO film prepared at the working pressure of 0.4 Pa exhibits the best crystallinity, the maximal grain size, the highest transmittance, the lowest resistivity and the highest figure of merit. The optical constants of the films were calculated using the method of optical spectrum fitting. The dispersion behavior of the films was studied by the single-electronic oscillator dispersion model. The oscillator parameters and optical bandgaps were determined. The results demonstrate that the microstructure and optoelectrical properties of the TGZO films are dependent on the working pressure.

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Influence of Sb Coated Substrates in Development of Vertical and Random Oriented ZnO Nanostructures for UV LED Application Using Nano Particle Assisted Pulsed Laser Deposition

Palani

Nakamura²,

Okazaki³

et al. 2012

Communications in Computer and Information Science

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Structural and optical properties of SbAl co-doped ZnO nanowires synthesized using Nanoparticle Assisted Pulsed Laser Deposition (NAPLD) with Sb as catalyst

Cited by 8 publications

References 39 publications

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Effect of working pressure on the structural, optical and electrical properties of titanium-gallium co-doped zinc oxide thin films

Influence of Sb Coated Substrates in Development of Vertical and Random Oriented ZnO Nanostructures for UV LED Application Using Nano Particle Assisted Pulsed Laser Deposition

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