Structural and optical properties of In35Sb45Se20−xTex phase-change thin films

Structural and electrical properties of In35Sb45Se20−xTex chalcogenide thin films

“…%) were prepared using a conventional melt quenching technique [23]. Typical, 10 g total (per batch) of appropriate quantities of 99.999% pure indium (In), antimony (Sb), selenium (Se) and tellurium (Te) were weighted according to their atomic percentages and sealed in quartz ampoules in a vacuum of ≈ 10 -5 Torr.…”

“…The XRD patterns of the as-prepared thin film (thickness 150 nm) as a representative example were investigated [23]. …”

“…From the JCPDS files, these peaks can be identified as Sb 2 Se 3 (card No. 22-0067 and 72-1184) and Sb 2 SeTe 2 (card No.38-0979) crystalline phases[23].After annealing the In 35 Sb 45 Se 20-x Te x thin films at 473 K for 10 min, crystalline peaks are obtained(Fig. 1).…”

Structural characterization and optical properties of thermally evaporated AgSb0.75In0.25Se2 thin films

“…Ge-Sb-Te [6] In-Sb-Se [7] and Ag-In-SbTe [8] materials have been commercially used in rewritable optical memories. The storage mechanism is based on the change of optical properties or electrical resistance in the phase change materials, due to a reversible structural transition from an amorphous state to a crystalline state [6][7][8][9]. It has been reported that, the ternary AgSbSe 2 compound crystallizes with NaCl type structure possesses a number of desired phase change properties [10,11].…”