Several optical methods including ultraviolet absorption, infrared absorption of the hydroxyl ions, Raman spectroscopy, and the Z-scan method have been used to determine the damage resistance threshold in 0-0.72 mol. % Zr-containing, flux-grown, nearly stoichiometric LiNbO 3 single crystals. All spectroscopical methods used indicate that samples containing at least ≈0.085 mol: % Zr in the crystal are above the threshold while Z-scan data locate the photorefractive damage threshold between 0.085 and 0.314 mol. % Zr. For LN grown from congruent melt the threshold concentration of the optical damage resistant (ODR) ions is roughly 5, 4, and 2 mol. % for di-, tri-, and tetravalent ions, respectively. For example, the threshold concentration for Zr-doped congruent LN crystals was found to be at about 2 mol. % [3,10,11]. Another factor beside the ODR ions and their valency strongly effecting the threshold concentration is stoichiometry of the crystal. The incorporation of ODR ions reduces the amount of antisite Nb Li in the lattice. In nearly stoichiometric LiNbO 3 (sLN) crystals where the Nb Li concentration is almost zero, the threshold value of the dopant concentration can be lower than 0.2 mol. % as was observed for Mg-doped sLN [12] used for instance for terahertz pulse generation [13]. Zr-doped nearly stoichiometric LN crystals prepared by the vapor transport equilibration method were found to have high resistance against optical damage when doped above 0.5 mol. % Zr [14]. The basic advantage of choosing tetravalent ODR dopants comes from their lower damage threshold concentrations; lower built-in dopant content facilitates the growth of more homogeneous crystals, resulting in high-quality samples for device applications.The aim of the present work is to characterize the damage resistance properties of tetravalent Zr-doped sLN crystals by ultraviolet (UV), infrared (IR), and Raman spectroscopies as well as by the Z-scan method. These methods proved earlier very efficient to determine the threshold concentration of the dopants.A series of stoichiometric LN crystals doped with Zr in the 0-0.45 mol. % concentration range were grown by the high-temperature top-seeded solution growth method using K 2 O flux [12]. The Zr concentration in the crystal was determined by inductively coupled plasma mass spectroscopy (ICP-MS). As shown in Fig. 1, the amount of incorporated Zr, at least in the range 0-0.715 mol. % realized in our samples, monotonously increases with increasing concentration of Zr in the starting flux. The relatively high distribution coefficient of Zr as compared to that observed in the melt-grown congruent crystals [3] may be related to the different growing technique, similarly to the case of Mg [12].For optical spectroscopical measurements 1-2 mm thick z-and y-cut samples have been prepared. The UV-visible absorption spectra of z-cut sLN:Zr crystals were measured by a Jasco V-550 spectrometer at room temperature. The spectra of the stretching vibrational bands of the hydroxyl ions (OH − ) in sLN:Zr were